SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
・V
DSS
= 500V, I
D
= 13A
・Drain-Source
ON Resistance :
R
DS(ON)
=0.44Ω(Max) @V
GS
= 10V
・Qg(typ.)
= 35nC
KF13N50P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF13N50P
MAXIMUM RATING
(Tc=25℃)
RATING
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
@T
C
=25℃
Drain Current
@T
C
=100℃
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25℃
Derate above 25℃
T
j
T
stg
SYMBOL
KF13N50P
V
DSS
V
GSS
I
D
I
DP
E
AS
E
AR
dv/dt
P
D
208
1.66
150
-55½150
13
8
40
860
19.5
4.5
49.8
0.4
500
±30
13*
8*
40*
mJ
mJ
V/ns
W
W/℃
℃
℃
A
KF13N50F
UNIT
KF13N50F
V
V
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
R
thJC
R
thJA
0.6
62.5
2.51
62.5
℃/W
℃/W
* : Drain current limited by maximum junction temperature.
EQUIVALENT CIRCUIT
2010. 8. 16
Revision No : 2
1/7
KF13N50P/F
ELECTRICAL CHARACTERISTICS
(Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
BV
DSS
ΔBV
DSS
/ΔT
j
I
DSS
V
th
I
GSS
R
DS(ON)
I
D
=250μ V
GS
=0V
A,
I
D
=250μ Referenced to 25℃
A,
V
DS
=500V, V
GS
=0V,
V
DS
=V
GS
, I
D
=250μ
A
V
GS
=±30V, V
DS
=0V
V
GS
=10V, I
D
=6.5A
500
-
-
2.5
-
-
-
0.63
-
-
-
0.35
-
-
10
4.5
±100
0.44
V
V/℃
μ
A
V
nA
Ω
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SP
V
SD
t
rr
Q
rr
V
GS
<V
th
I
S
=13A, V
GS
=0V
I
S
=13A, V
GS
=0V,
s
dIs/dt=100A/μ
-
-
-
-
-
-
-
-
360
4.4
13
A
52
1.4
-
-
V
ns
μ
C
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
DS
=25V, V
GS
=0V, f=1.0MHz
V
DD
=250V
I
D
=13A
R
G
=25Ω
(Note4,5)
V
DS
=400V, I
D
=13A
V
GS
=10V
(Note4,5)
-
-
-
-
-
-
-
-
-
-
35
9
13
28
45
105
55
1700
210
15
-
-
-
-
-
ns
-
-
-
-
-
pF
nC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=6.0mH, I
S
=13A, V
DD
=50V, R
G
=25Ω, Starting T
j
=25℃.
s,
Note 3) I
S
≤13A,
dI/dt≤200A/μ V
DD
≤BV
DSS
, Starting T
j
=25℃.
s,
Note 4) Pulse Test : Pulse width
≤300μ
Duty Cycle≤2%.
Note 5) Essentially independent of operating temperature.
Marking
2010. 8. 16
Revision No : 2
2/7
京公网安备 11010802033920号
EEWORLD
