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KF80N08P

Description
TO-220AB PACKAGE
CategoryDiscrete semiconductor    The transistor   
File Size23KB,1 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric View All

KF80N08P Overview

TO-220AB PACKAGE

KF80N08P Parametric

Parameter NameAttribute value
MakerKEC
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)1200 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage75 V
Maximum drain current (ID)80 A
Maximum drain-source on-resistance0.01 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)320 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
SEMICONDUCTOR
MARKING SPECIFICATION
KF80N08P
TO-220AB PACKAGE
1. Marking method
Laser Marking
2. Marking
1
2
KF80N08
P
801
3
No.
Item
Device Name
Marking
KF
80N08
Description
KEC Fresh FET
80N08
TO-220AB
8
Year
Week
0~9 : 2000~2009
01 : 01th Week
Package & Version
Lot No.
P
801
01
2008. 6. 16
Revision No : 0
1/1
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