SEMICONDUCTOR
TECHNICAL DATA
General Description
Switching regulator and DC-DC converter applications.
It s mainly suitable for power management in notebook,
portable equipment and battery powered systems.
KMA7D0NP30Q
N and P-CH Trench MOSFET
A
FEATURES
N-Channel
: V
DSS
=30V, I
D
=7A.
: R
DS(ON)
=17m (Typ.) @ V
GS
=10V.
: R
DS(ON)
=22m (Typ.) @ V
GS
=4.5V.
8
5
B1 B2
T
L
1
4
P-Channel
: V
DSS
=-30V, I
D
=-5.5A.
: R
DS(ON)
=35m (Typ.) @ V
GS
=-10V.
: R
DS(ON)
=51m (Typ.) @ V
GS
=-4.5V.
Super high dense cell design for extermely low R
DS(ON)
.
Reliable and rugged.
D
P
G
H
DIM
A
B1
B2
D
G
H
L
P
T
MILLIMETERS
_
4.9 + 0.1
_
3.9 + 0.1
_
6.0 + 0.2
_
0.4 + 0.1
0.15+0.1/-0.05
_
1.5 + 0.2
_
0.75 + 0.2
1.27
0.5 MAX
FLP-8
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
DC
Drain Curren
Pulsed
Drain Power Dissipation
Ta=25
Ta=100
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Case
)
SYMBOL
V
DSS
V
GSS
I
D
*
I
DP
P
D
*
T
j
T
stg
R
thJA
*
N-Ch
30
20
7
28
2
W
0.8
150
-55 150
62.5
/W
P-Ch
-30
20
-5.5
A
-20
UNIT
V
V
* : Surface Mounted on FR4 Board, t 10sec.
D1
D1
S2
PIN CONNECTION (TOP VIEW)
S1
G1
S2
G2
1
8
D1
D1
D2
D2
S1
G1
G2
2
7
3
6
4
5
D2
D2
N-Channel MOSFET
P-Channel MOSFET
2005. 10. 25
Revision No : 3
1/8
KMA7D0NP30Q
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
N-Ch
I
D
= 250 A, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
DS
=V
GS
, I
D
=
V
GS
=
250 A
P-Ch
N-Ch
P-Ch
N-Ch
-
-
P-Ch
-
N-Ch
P-Ch
-
-
51
0.7
-0.7
78
1.3
V
-1.3
22
35
30
56
m
-1
-
-
-1.5
-
17
-2
100
24
nA
P-Ch
N-Ch
P-Ch
N-Ch
30
-30
-
-
1
-
-
-
-
1.5
-
V
-
1
-1
2
V
A
Drain Cut-off Current
I
DSS
Gate Threshold Voltage
V
th
I
GSS
Gate Leakage Current
20V, V
DS
=0V
V
GS
=10V, I
D
=7A
Drain-Source ON Resistance
R
DS(ON)
(Note 1)
V
GS
=4.5V, I
D
=5A
V
GS
=-10V, I
D
=-5.5A
V
GS
=-4.5V, I
D
=-4A
Source-Drain Diode Forward Voltage
V
SD
(Note 1)
I
DR
=2A, V
GS
=0V
I
DR
=-2.3A, V
GS
=0V
Dynamic
(Note 2)
Total Gate Charge
Q
g
N-Channel
V
DS
=15V, I
D
=7A
V
GS
=10V
P-Channel
V
DS
=-15V, I
D
=-5.5A
V
GS
=-10V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
(Fig.1)
P-Ch
N-Ch
N-Channel
V
DD
=15V, I
D
=2A
V
IN
=10V, R
G
=6
R
L
=7.5
P-Channel
V
DD
=-15V, I
D
=-2A
V
IN
=-10V, R
G
=6
R
L
=7.5
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
(Fig.2)
N-Ch
P-Ch
N-Channel
V
DS
=25V, V
GS
=0V
f=1.0MHz
P-Channel
V
DS
=-25V, V
GS
=0V
f=1.0MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
19
33
1.6
5
3.6
4
11
12
17
15
36
35
20
15
835
950
15
110
145
160
28
43
-
nC
-
-
-
20
24
28
29
ns
Turn-off Delay time
t
d(off)
62
60
36
30
-
-
-
pF
-
-
-
Gate-Source Charge
Q
gs
Gate-Drain Charge
Q
gd
Turn-on Delay time
t
d(on)
Turn-on Rise time
t
r
Turn-off Fall time
t
f
Input Capacitance
C
iss
Reverse Transfer Capacitance
C
rss
Output Capacitance
Note 1) Pulse test : Pulse width 300
C
oss
, duty cycle 2%
Note 2) Guaranteed by design, not subject to production testing.
2005. 10. 25
Revision No : 3
2/8
KMA7D0NP30Q
N-Channel
I
D
- V
DS
30
30
V
GS
= 4, 5, 6, 7, 8, 9, 10V
I
D
- V
GS
20
15
10
5
0
0
1
2
V
GS
=2V
V
GS
=3V
Drain Current I
D
(A)
Drain Current I
D
(A)
25
25
20
15
10
Tj= -55 C
Tj=125 C
5
0
Tj=25 C
3
4
5
0
1
2
3
4
5
Drain - Source Voltage V
DS
(V)
Gate - Source Voltage V
GS
(V)
Vth - Tj
Normalized Threshold Voltage Vth (V)
1.6
40
R
DS(ON)
- I
D
On - Resistance R
DS(ON)
(mΩ)
I
DS
= 250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-75
-50
-25
0
25
50
75
100 125 150
35
30
25
20
15
10
5
0
5
10
15
20
25
30
V
GS
= 10V
V
GS
= 4.5V
Junction Temperature Tj ( C )
Drain Current ID (A)
I
S
- V
SD
30
1.8
R
DS(ON)
- Tj
V
GS
= 10V
I
DS
= 7A
Reverse Drain Current I
S
(A)
10
Tj=150 C
Normalized On Resistance
1.2
1.4
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75
1
Tj=25 C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
-50
-25
0
25
50
75
100 125 150
Source - Drain Voltage V
SD
(V)
Junction Temperture Tj ( C )
2005. 10. 25
Revision No : 3
3/8
KMA7D0NP30Q
C - V
DS
1400
10
Qg- V
GS
Gate - Source Voltage V
GS
(V)
Frequency=1MHz
VDS=15V
1200
Capacitance (pF)
8
6
4
2
0
IDS=7A
1000
800
600
400
200
Crss
Ciss
Coss
0
0
10
20
30
0
4
8
12
16
20
Drain - Source Voltage V
DS
(V)
Gate - Charge Qg (nC)
Safe Operation Area
10
2
Rth
Normalized Transient Thermal
Resistance
10
0
Duty=0.5
0.2
Drain Current I
D
(A)
10
1
R
D
O
S(
N)
t
mi
Li
300
µ
s
1ms
10ms
10
-1
0.1
0.05
0.02
0.01
10
0
100ms
1s
10
-1
10
-2
S
le
ing
Pu
lse
DC
Ta= 25
C
10
-2
10
-2
10
-1
10
0
10
1
10
2
10
-3
10
-4
Mounted on FR4 Board
RthJA : 62.5 C /W
10
-3
10
-2
10
-1
10
0
10
1
Drain - Source Voltage V
DS
(V)
Square Wave Pulse Duration (sec)
2005. 10. 25
Revision No : 3
4/8
KMA7D0NP30Q
P-Channel
I
D
- V
DS
-24
V
GS
= -5,-6,-7,-8,-9,-10V
I
D
- V
GS
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0
-16
-12
-8
V
GS
=-3V
Drain Current I
D
(A)
Drain Current I
D
(A)
-20
V
GS
=-4V
Tj=125 C
Tj= -55 C
Tj=25 C
-4
0
0
-2
-4
-6
-8
-10
-1
-2
-3
-4
-5
Drain - Source Voltage V
DS
(V)
Gate - Source Voltage V
GS
(V)
Vth - Tj
Normalized Threshold Voltage Vth (V)
-1.75
-1.50
-1.25
-1.00
-0.75
-0.50
-0.25
0.00
-75
-50
-25
0
25
50
75
100 125 150
80
R
DS(ON)
- I
D
On - Resistance R
DS(ON)
(mΩ)
I
DS
= -250µA
70
60
50
40
30
20
10
0
-4
-8
-12
-16
-20
-24
V
GS
=-10V
V
GS
=-4.5V
Junction Temperature Tj ( C )
Drain Current ID (A)
I
S
- V
SD
1.8
R
DS(ON)
- Tj
V
GS
= -10V
I
DS
= -5.5A
Reverse Drain Current I
S
(A)
-10
Normalized On Resistance
-1.2
-1.4
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75
Tj=150 C
Tj=25 C
-1
-0.1
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-50
-25
0
25
50
75
100 125 150
Source - Drain Voltage V
SD
(V)
Junction Temperture Tj ( C )
2005. 10. 25
Revision No : 3
5/8
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