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KMB5D5NP30Q

Description
FLP-8 (1) PACKAGE
CategoryDiscrete semiconductor    The transistor   
File Size23KB,1 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric View All

KMB5D5NP30Q Overview

FLP-8 (1) PACKAGE

KMB5D5NP30Q Parametric

Parameter NameAttribute value
MakerKEC
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknow
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain-source on-resistance0.04 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Maximum pulsed drain current (IDM)23 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
SEMICONDUCTOR
MARKING SPECIFICATION
KMB5D5NP30Q
FLP-8 (1) PACKAGE
1. Marking method
Laser Marking.
2. Marking
KMB5D5NP
30Q
2
1
720
3
No.
Item
Device Name
Pin No.
Lot No.
Marking
KMB5D5NP30Q
Dot
7
720
20
Description
KMB5D5NP30Q
Pin 1
Year
Week
0~9 : 2000~2009
01 : 1st Week
2008. 6. 16
Revision No : 0
1/1
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