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2N7627UC

Description
Small Signal Field-Effect Transistor, 0.65A I(D), 60V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-6
CategoryDiscrete semiconductor    The transistor   
File Size202KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

2N7627UC Overview

Small Signal Field-Effect Transistor, 0.65A I(D), 60V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-6

2N7627UC Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-XDSO-N6
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.65 A
Maximum drain-source on-resistance1.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XDSO-N6
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD-97574
2N7627UC
IRHLUC7970Z4
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (LCC-6)
Product Summary
Part Number
Radiation Level R
DS(on)
I
D
IRHLUC7970Z4 100K Rads (Si) 1.60Ω -0.65A
IRHLUC7930Z4 300K Rads (Si)
1.60Ω -0.65A
60V, DUAL P-CHANNEL
TECHNOLOGY
™
International Rectifier’s R7
TM
Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
LCC-6
Features:
n
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Complimentary N-Channel Available -
IRHLUC770Z4
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = -4.5V, TC = 25°C Continuous Drain Current
ID @ VGS = -4.5V,TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting SurfaceTemp
Weight
For footnotes refer to the last page
300 (for 5s)
0.2 (Typical)
-0.65
-0.41
-2.6
1.0
0.01
±10
34
-0.65
0.1
-5.6
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°
C
g
www.irf.com
1
10/11/10

2N7627UC Related Products

2N7627UC
Description Small Signal Field-Effect Transistor, 0.65A I(D), 60V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-6
package instruction SMALL OUTLINE, R-XDSO-N6
Reach Compliance Code compli
ECCN code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V
Maximum drain current (ID) 0.65 A
Maximum drain-source on-resistance 1.6 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-XDSO-N6
Number of components 2
Number of terminals 6
Operating mode ENHANCEMENT MODE
Package body material UNSPECIFIED
Package shape RECTANGULAR
Package form SMALL OUTLINE
Polarity/channel type P-CHANNEL
Certification status Not Qualified
surface mount YES
Terminal form NO LEAD
Terminal location DUAL
transistor applications SWITCHING
Transistor component materials SILICON
Base Number Matches 1
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