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2MBI225VJ-120-50

Description
IGBT MODULE
File Size379KB,6 Pages
ManufacturerFUJI
Websitehttp://www.fujielectric.co.jp/eng/fdt/scd/
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2MBI225VJ-120-50 Overview

IGBT MODULE

http://www.fujisemi.com
2MBI225VJ-120-50
IGBT MODULE (V series)
1200V / 225A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
IGBT Modules
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Symbols
V
CES
V
GES
Ic
Ic pulse
Collector current
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Operating junction temperature (under switching conditions)
T
jop
Case temperature
T
C
Storage temperature
Tstg
between terminal and copper base (*1)
Isolation voltage
V
iso
between thermistor and others (*2)
Mounting (*3)
Screw torque
-
Terminals (*4)
PC-Board (*5)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Conditions
Continuous
1ms
1ms
1 device
Tc=80°C
Tc=80°C
Maximum ratings
1200
±20
225
450
225
450
1070
175
150
125
-40 to +125
2500
3.5
4.5
0.6
Units
V
V
A
W
°C
VAC
Nm
Inverter
AC : 1min.
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5) Note *4: Recommendable value : 3.5-4.5 Nm (M6)
Note *5: Recommendable value : 0.4-0.6 Nm (M2.5)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Symbols
I
CES
I
GES
V
GE (th)
V
CE (sat)
(terminal)
Conditions
V
GE
= 0V, V
CE
= 1200V
V
CE
= 0V, V
GE
= ±20V
V
CE
= 20V, I
C
= 225mA
V
GE
= 15V
I
C
= 225A
V
CE
= 10V, V
GE
= 0V, f = 1MHz
V
CC
= 600V
I
C
= 225A
V
GE
= ±15V
R
G
= 1.6Ω
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Collector-Emitter saturation voltage
V
CE (sat)
(chip)
Inverter
Input capacitance
Turn-on time
Turn-off time
Cies
ton
tr
tr (i)
toff
tf
V
F
(terminal)
Forward on voltage
V
F
(chip)
Reverse recovery time
Thermistor
Resistance
B value
trr
R
B
V
GE
= 0V
I
F
= 225A
I
F
= 225A
T=25°C
T=100°C
T=25/50°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Characteristics
min.
typ.
max.
-
-
3.0
-
-
600
6.0
6.5
7.0
-
2.20
2.65
-
2.55
-
-
2.60
-
-
1.85
2.30
-
2.20
-
-
2.25
-
-
18
-
-
550
1200
-
180
600
-
120
-
-
1050
2000
-
110
350
-
2.05
2.50
-
2.20
-
-
2.15
-
-
1.70
2.15
-
1.85
-
-
1.80
-
-
200
600
-
5000
-
465
495
520
3305
3375
3450
Characteristics
min.
typ.
max.
-
-
0.14
-
-
0.19
-
0.0167
-
Units
mA
nA
V
V
nF
nsec
V
nsec
K
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device) (*6)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
Inverter IGBT
Inverter FWD
with Thermal Compound
Units
°C/W
Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound.
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