2MBI225VN-120-50
IGBT MODULE (V series)
1200V / 225A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
IGBT Modules
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
V
CES
V
GES
Ic
Ic pulse
Collector current
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Operating junction temperature (under switching conditions)
T
jop
Case temperature
T
C
Storage temperature
Tstg
between terminal and copper base (*1)
Isolation voltage
V
iso
between thermistor and others (*2)
Mounting (*3)
Screw torque
-
Terminals (*4)
Conditions
Continuous
1ms
1ms
1 device
Tc=80°C
Tc=80°C
Maximum ratings
1200
±20
225
450
225
450
1070
175
150
125
-40 to +125
2500
3.5
4.5
Units
V
V
A
W
°C
VAC
Nm
Maximum Ratings and Characteristics
Inverter
AC : 1min.
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : Mounting : 2.5-3.5 Nm (M5) Note *4: Recommendable value : Terminals : 3.5-4.5 Nm (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Symbols
I
CES
I
GES
V
GE (th)
V
CE (sat)
(terminal)
V
CE (sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
V
F
(terminal)
V
F
(chip)
trr
R
B
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Conditions
V
GE
= 0V, V
CE
= 1200V
V
CE
= 0V, V
GE
= ±20V
V
CE
= 20V, I
C
= 225mA
V
GE
= 15V
I
C
= 225A
V
CE
= 10V, V
GE
= 0V, f = 1MHz
V
CC
= 600V
I
C
= 225A
V
GE
= ±15V
R
G
= 1.6Ω
Collector-Emitter saturation voltage
Inverter
Input capacitance
Turn-on time
Turn-off time
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Forward on voltage
V
GE
= 0V
I
F
= 225A
I
F
= 225A
T=25°C
T=100°C
T=25/50°C
Reverse recovery time
Thermistor
Resistance
B value
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Characteristics
min.
typ.
max.
-
-
3.0
-
-
600
6.0
6.5
7.0
-
2.20
2.65
-
2.55
-
-
2.60
-
-
1.85
2.30
-
2.20
-
-
2.25
-
-
18
-
-
550
1200
-
180
600
-
120
-
-
1050
2000
-
110
350
-
2.05
2.50
-
2.20
-
-
2.15
-
-
1.70
2.15
-
1.85
-
-
1.80
-
-
200
600
-
5000
-
465
495
520
3305
3375
3450
Characteristics
min.
typ.
max.
-
-
0.14
-
-
0.19
-
0.0167
-
Units
mA
nA
V
V
nF
nsec
V
nsec
Ω
K
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device) (*5)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
Inverter IGBT
Inverter FWD
with Thermal Compound
Units
°C/W
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
2MBI225VN-120-50
Characteristics (Representative)
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
500
Vge=20V
400
Collector current: Ic [A]
300
200
100
8V
0
0
1
2
3
4
5
Collector-Emitter voltage: Vce [V]
0
0
1
2
3
4
10V
15V
12V
Collector current: Ic [A]
400
300
200
100
IGBT Modules
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
500
Vge= 20V
15V
12V
10V
8V
5
Collector-Emitter voltage: Vce [V]
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Vge= 15V / chip
500
400
300
200
100
0
0
1
2
3
4
5
Collector-Emitter Voltage: Vce [V]
150°C
Tj=25°C 125°C
Collector-Emitter Voltage: Vce [V]
[INVERTER]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
10
8
6
4
2
0
5
10
15
20
25
Gate-Emitter Voltage: Vge [V]
Ic=450A
Ic=225A
Ic=112A
Collector Current: Ic [A]
[INVERTER]
Gate Capacitance vs. Collector-Emitter Voltage (typ.)
Vge= 0V, ƒ= 1MHz, Tj= 25°C
Gate Capacitance: Cies, Coes, Cres [nF]
Collector-Emitter voltage: Vce [200V/div]
Gate-Emitter voltage: Vge [5V/div]
100
[INVERTER]
Dynamic Gate Charge (typ.)
Vcc=600V, Ic=225A, Tj= 25°C
10
Cies
Vce
Vge
1
Cres
Coes
0.1
0
5
10
15
20
25
30
Collector-Emitter voltage: Vce [V]
0
500
1000
1500
2000
Gate charge: Qg [nC]
2
2MBI225VN-120-50
IGBT Modules
[INVERTER]
Switching time vs. Collector current (typ.)
Vcc=600V, Vge=±15V, Rg=1.6Ω, Tj=25°C
10000
Switching time: ton, tr, toff, tf [nsec]
Switching time: ton, tr, toff, tf [nsec]
[INVERTER]
Switching time vs. Collector current (typ.)
Vcc=600V, Vge=±15V, Rg=1.6Ω, Tj=125°C, 150°C
10000
Tj=125
o
C
Tj=150
o
C
1000
toff
ton
tr
100
tf
1000
toff
ton
tr
100
tf
10
0
100
200
300
400
500
Collector current: Ic [A]
10
0
100
200
300
400
500
Collector current: Ic [A]
[INVERTER]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=225A, Vge=±15V, Tj=125°C, 150°C
Switching loss: Eon, Eoff, Err [mJ/pulse]
10000
Switching time: ton, tr, toff, tf [nsec]
Tj=125 C
Tj=150
o
C
1000
toff
ton
tr
100
tf
o
[INVERTER]
Switching loss vs. Collector current (typ.)
Vcc=600, Vge=±15V, Rg=1.6Ω, Tj=125°C, 150°C
80
Tj=125
o
C
Tj=150
o
C
60
Eoff
40
Err
20
Eon
0
0
100
200
300
400
500
Collector current: Ic [A]
10
0.1
1
10
100
Gate resistance: Rg [Ω]
[INVERTER]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=225A, Vge=±15V, Tj=125°C, 150°C
Switching loss: Eon, Eoff, Err [mJ/pulse]
150
Tj=125 C
Tj=150
o
C
100
o
[INVERTER]
Reverse bias safe operating area (max.)
+Vge=15V, -Vge=15V, Rg=1.6Ω, Tj=150°C
600
Eon
Collector current: Ic [A]
500
400
300
200
100
0
50
Eoff
Err
0
0.1
1.0
10.0
100.0
Gate resistance: Rg [Ω]
0
500
1000
1500
Collector-Emitter voltage: Vce [V]
3
2MBI225VN-120-50
IGBT Modules
[INVERTER]
Forward Current vs. Forward Voltage (typ.)
chip
500
400
300
200
100
150°C
0
0
1
2
3
Forward on voltage: Vf [V]
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
[INVERTER]
Reverse Recovery Characteristics (typ.)
Vcc=600V, Vge=±15V, Rg=1.6Ω, Tj=25°C
10000
Forward current: If [A]
Tj=25°C
1000
Irr
trr
125°C
100
10
0
100
200
300
400
500
Forward current: If [A]
[INVERTER]
Reverse Recovery Characteristics (typ.)
Vcc=600V, Vge=±15V, Rg=1.6Ω, Tj=125°C, 150°C
10000
Thermal resistanse: Rth(j-c) [°C/W]
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
Tj=125 C
Tj=150
o
C
1000
o
Transient Thermal Resistance (max.)
1
FWD
0.1
IGBT
Irr
trr
100
0.01
10
0
100
200
300
400
500
Forward current: If [A]
0.001
0.001
0.01
0.1
1
Pulse Width : Pw [sec]
[THERMISTOR]
Temperature characteristic (typ.)
100
Resistance : R [kΩ]
10
1
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
Temperature [°C]
4
2MBI225VN-120-50
IGBT Modules
Outline Drawings, mm
OUT
Equivalent Circuit Schematic
[ Inverter ]
[ Thermistor ]
C
P
T1
T2
G1
E1
OUT
G2
E2
N
5
N
P
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