http://www.fujisemi.com
2MBI450VJ-120-50
IGBT MODULE (V series)
1200V / 450A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
IGBT Modules
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Symbols
V
CES
V
GES
Ic
Ic pulse
Collector current
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Operating junction temperature (under switching conditions)
T
jop
Case temperature
T
C
Storage temperature
Tstg
between terminal and copper base (*1)
Isolation voltage
V
iso
between thermistor and others (*2)
Mounting (*3)
Screw torque
-
Terminals (*4)
PC-Board (*5)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Conditions
Continuous
1ms
1ms
1 device
Tc=80°C
Tc=80°C
Maximum ratings
1200
±20
450
900
450
900
2270
175
150
125
-40 to +125
2500
3.5
4.5
0.6
Units
V
V
A
W
°C
VAC
Nm
Inverter
AC : 1min.
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5) Note *4: Recommendable value : 3.5-4.5 Nm (M6)
Note *5: Recommendable value : 0.4-0.6 Nm (M2.5)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Symbols
I
CES
I
GES
V
GE (th)
V
CE (sat)
(terminal)
Conditions
V
GE
= 0V, V
CE
= 1200V
V
CE
= 0V, V
GE
= ±20V
V
CE
= 20V, I
C
= 450mA
V
GE
= 15V
I
C
= 450A
V
CE
= 10V, V
GE
= 0V, f = 1MHz
V
CC
= 600V
I
C
= 450A
V
GE
= ±15V
R
G
= 0.52Ω
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Collector-Emitter saturation voltage
V
CE (sat)
(chip)
Inverter
Input capacitance
Turn-on time
Turn-off time
Cies
ton
tr
tr (i)
toff
tf
V
F
(terminal)
Forward on voltage
V
F
(chip)
Reverse recovery time
Thermistor
Resistance
B value
trr
R
B
V
GE
= 0V
I
F
= 450A
I
F
= 450A
T=25°C
T=100°C
T=25/50°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Characteristics
min.
typ.
max.
-
-
3.0
-
-
600
6.0
6.5
7.0
-
2.25
2.70
-
2.55
-
-
2.60
-
-
1.75
2.20
-
2.05
-
-
2.10
-
-
41
-
-
550
1200
-
180
600
-
120
-
-
1050
2000
-
110
350
-
2.20
2.65
-
2.35
-
-
2.30
-
-
1.70
2.15
-
1.85
-
-
1.80
-
-
200
600
-
5000
-
465
495
520
3305
3375
3450
Characteristics
min.
typ.
max.
-
-
0.066
-
-
0.100
-
0.0167
-
Units
mA
nA
V
V
nF
nsec
V
nsec
Ω
K
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device) (*6)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
Inverter IGBT
Inverter FWD
with Thermal Compound
Units
°C/W
Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
2MBI450VJ-120-50
Characteristics (Representative)
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
1000
VGE=20V15V
800
Collector current: Ic [A]
Collector current: Ic [A]
12V
800
IGBT Modules
http://www.fujisemi.com
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
1000
VGE= 20V 15V
12V
600
10V
400
600
10V
400
200
8V
0
0
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
200
8V
0
0
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
VGE= 15V / chip
1000
Tj=25°C 125°C
800
Collector Current: Ic [A]
150°C
Collector-Emitter Voltage: VCE [V]
8
[INVERTER]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
10
600
6
400
4
Ic=900A
Ic=450A
Ic=225A
5
10
15
20
25
200
2
0
0
1
2
3
4
5
Collector-Emitter Voltage: VCE [V]
0
Gate-Emitter Voltage: VGE [V]
[INVERTER]
Gate Capacitance vs. Collector-Emitter Voltage (typ.)
VGE= 0V, ƒ= 1MHz, Tj= 25°C
Gate Capacitance: Cies, Coes, Cres [nF]
***
Collector-Emitter voltage: VCE [200V/div]
Gate-Emitter voltage: VGE [5V/div]
1000
[INVERTER]
Dynamic Gate Charge (typ.)
Vcc=600V, Ic=450A, Tj= 25°C
100
Cies
VCE
VGE
10
Cres
Coes
1
0
10
20
30
0
1000
2000
3000
4000
5000
6000
Collector-Emitter voltage: VCE [V]
Gate charge: Qg [nC]
2
2MBI450VJ-120-50
IGBT Modules
http://www.fujisemi.com
[INVERTER]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=0.52Ω, Tj=25°C
10000
Switching time: ton, tr, toff, tf [nsec]
Switching time: ton, tr, toff, tf [nsec]
[INVERTER]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=0.52Ω, Tj=125°C, 150°C
10000
Tj=125
o
C
Tj=150
o
C
1000
toff
ton
tr
100
tf
1000
toff
ton
tr
100
tf
10
0
200
400
600
800
1000
10
0
200
400
600
800
1000
Collector current: Ic [A]
Collector current: Ic [A]
[INVERTER]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=450A, VGE=±15V, Tj=125°C, 150°C
Switching loss: Eon, Eoff, Err [mJ/pulse]
10000
Switching time: ton, tr, toff, tf [nsec]
Tj=125
o
C
Tj=150
o
C
1000
toff
ton
tr
[INVERTER]
Switching loss vs. Collector current (typ.)
Vcc=600, VGE=±15V, Rg=0.52Ω, Tj=125°C, 150°C
150
Tj=125
o
C
Tj=150
o
C
Eoff
100
tf
100
Err
50
Eon
0
0
200
400
600
800
1000
10
0.1
1
10
100
Gate resistance: Rg [Ω]
Collector current: Ic [A]
[INVERTER]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=450A, VGE=±15V, Tj=125°C, 150°C
Switching loss: Eon, Eoff, Err [mJ/pulse]
250
Tj=125 C
Tj=150
o
C
o
[INVERTER]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE=15V, Rg=0.52Ω, Tj=150°C
1400
Eon
Collector current: Ic [A]
1200
1000
800
600
400
200
0
200
150
100
Eoff
50
Err
0
0
1
10
100
0
500
1000
1500
Gate resistance: Rg [Ω]
Collector-Emitter voltage: VCE [V]
3
2MBI450VJ-120-50
IGBT Modules
http://www.fujisemi.com
[INVERTER]
Forward Current vs. Forward Voltage (typ.)
chip
1000
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
[INVERTER]
Reverse Recovery Characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=0.52Ω, Tj=25°C
10000
Forward current: IF [A]
800
Tj=25°C
600
1000
Irr
400
125°C
200
150°C
0
0
1
2
3
Forward on voltage: VF [V]
100
trr
10
0
200
400
600
800
1000
Forward current: IF [A]
[INVERTER]
Reverse Recovery Characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=0.52Ω, Tj=125°C, 150°C
Tj=125 C
Tj=150
o
C
1000
Irr
trr
100
o
Transient Thermal Resistance (max.)
1
Thermal resistanse: Rth(j-c) [°C/W]
***
10000
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
FWD
0.1
IGBT
0.01
10
0
200
400
600
800
1000
Forward current: IF [A]
0.001
0.001
0.01
0.1
1
Pulse Width : Pw [sec]
[THERMISTOR]
Temperature characteristic (typ.)
100
Resistance : R [kΩ]
10
1
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
Temperature [°C]
4
2MBI450VJ-120-50
IGBT Modules
http://www.fujisemi.com
Outline Drawings, mm
Equivalent Circuit Schematic
[ Inverter ]
[ Thermistor ]
+
CX1
T1
T2
G1.1
EX1.1
GND
G1.2
EX1.2
G1.3
EX1.3
G2.1
Cu-Base
EX2.1
G2.2
EX2.2
G2.3
EX2.3
5
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