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KDS112E

Description
SILICON, VHF BAND, MIXER DIODE
CategoryDiscrete semiconductor    diode   
File Size19KB,1 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Environmental Compliance
Download Datasheet Parametric View All

KDS112E Overview

SILICON, VHF BAND, MIXER DIODE

KDS112E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerKEC
package instructionR-PDSO-F3
Contacts3
Manufacturer packaging codeESM
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Maximum diode capacitance1.2 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandVERY HIGH FREQUENCY
JESD-30 codeR-PDSO-F3
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
SEMICONDUCTOR
MARKING SPECIFICATION
KDS112E
ESM PACKAGE
1. Marking method
Laser Marking
2. Marking
BF
No.
Item
Device Mark
hFE Grade
Marking
BF
-
Description
KDS112E
-
2000. 12. 27
Revision No : 0
1/1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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