SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package
Low Forward Voltage
Small Total Capacitance
: ESM.
: V
F
=0.9V (Typ.).
2
E
KDS121E
SILICON EPITAXIAL PLANAR DIODE
B
Fast Reverse Recovery Time : t
rr
=1.6ns(Typ.).
A
G
H
D
DIM
A
B
C
D
E
G
H
J
: C
T
=0.9pF (Typ.).
MILLIMETERS
_
1.60 + 0.10
_
0.85 + 0.10
_
0.70 + 0.10
0.27+0.10/-0.05
_
1.60 + 0.10
_
1.00 + 0.10
0.50
_
0.13 + 0.05
1
3
C
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
RM
V
R
I
FM
I
O
I
FSM
P
D
T
j
T
stg
RATING
85
80
300 *
100 *
2*
100
150
-55 150
UNIT
V
J
3
1. ANODE 1
V
mA
mA
A
mW
2. ANODE 2
3. CATHODE
2
1
ESM
Note : * Unit Rating. Total Rating=Unit Rating x 1.5
Marking
B3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
V
F(1)
Forward Voltage
V
F(2)
V
F(3)
Reverse Current
Total Capacitance
Reverse Recovery Time
I
R
C
T
t
rr
TEST CONDITION
I
F
=1mA
I
F
=10mA
I
F
=100mA
V
R
=80V
V
R
=0, f=1MHz
I
F
=10mA
MIN.
-
-
-
-
-
-
TYP.
0.60
0.72
0.90
-
0.9
1.6
MAX.
-
-
1.20
0.5
3.0
4.0
A
pF
nS
V
UNIT
2007. 5. 10
Revision No : 3
1/2
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