KDS123E datasheet, PDF - EEWORLD Datasheet

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KDS123E: Description0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size437KB，3 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/; Environmental Compliance

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KDS123E Overview

0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE

KDS123E Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	KEC
package instruction	R-PDSO-F3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-F3
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Maximum output current	0.1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.1 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	80 V
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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SEMICONDUCTOR

TECHNICAL DATA

ULTRA HIGH SPEED SWITCHING APPLICATION.

FEATURES

Low Forward Voltage

Fast Reverse Recovery Time

Small Total Capacitance

A

G

H

2

1

E

B

KDS123E

SILICON EPITAXIAL PLANAR DIODE

D

DIM

A

B

C

D

E

G

H

J

Ultra- Small Surface Mount Package

MILLIMETERS

_

1.60 + 0.10

_

0.85 + 0.10

_

0.70 + 0.10

0.27+0.10/-0.05

_

1.60 + 0.10

_

1.00 + 0.10

0.50

_

0.13 + 0.05

3

C

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Maximum (Peak) Reverse Voltage

Reverse Voltage

Maximum (Peak) Forward Current

Average Forward Current

Surge Current (10mS)

Power Dissipation

Junction Temperature

Storage Temperature Range

)

SYMBOL

V

RM

V

R

I

FM

I

O

I

FSM

P

D

T

j

T

stg

0.7

RATING

80

300*

100*

2*

100

150

-55 150

UNIT

V

J

3

1. CATHODE 2

V

2. ANODE 1

D1

D2

mA

A

mW

3. ANODE 2 / CATHODE 1

2

1

ESM

* Unit Rating. Total Rating=Unit Rating

Marking

US

Type Name

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Forward Voltage

Reverse Current

Total Capacitance

SYMBOL

V

F

I

R

C

T

TEST CONDITION

I

F

=100mA

V

R

=80V

V

R

=6V, f=1MHz

MIN.

-

TYP.

-

MAX.

1.2

0.1

3.5

UNIT

V

A

pF

2007. 10. 31

Revision No : 0

1/3

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