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KDS123V

Description
0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    The transistor   
File Size437KB,3 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric View All

KDS123V Overview

0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE

KDS123V Parametric

Parameter NameAttribute value
MakerKEC
package instructionULTRA SMALL, VSM, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Low Forward Voltage
Fast Reverse Recovery Time
Small Total Capacitance
2
KDS123V
SILICON EPITAXIAL PLANAR DIODE
E
B
A
G
H
1
3
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
RM
V
R
I
FM
I
O
I
FSM
P
D
T
j
T
stg
0.7
RATING
80
80
300*
100*
2*
100
150
-55 150
UNIT
V
V
mA
mA
A
mW
C
K
P
P
J
D
Ultra- Small Surface Mount Package
DIM MILLIMETERS
_
A
1.2 +0.05
_
B
0.8 +0.05
_
C
0.5 + 0.05
_
0.3 + 0.05
D
_
1.2 + 0.05
E
_
G
0.8 + 0.05
H
0.40
_
J
0.12 + 0.05
_
K
0.2 + 0.05
P
5
3
1. CATHODE 2
2. ANODE 1
3. ANODE 2 / CATHODE 1
D1
D2
2
1
VSM
* Unit Rating. Total Rating=Unit Rating
Marking
US
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Forward Voltage
Reverse Current
Total Capacitance
SYMBOL
V
F
I
R
C
T
TEST CONDITION
I
F
=100mA
V
R
=80V
V
R
=6V, f=1MHz
MIN.
-
-
-
TYP.
-
-
-
MAX.
1.2
0.1
3.5
UNIT
V
A
pF
2007. 10. 31
Revision No : 0
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