KDS127E datasheet, PDF - EEWORLD Datasheet

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KDS127E: DescriptionSILICON EPITAXIAL PLANAR DIODE; CategoryDiscrete semiconductor diode; File Size436KB，3 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/; Environmental Compliance

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KDS127E Overview

SILICON EPITAXIAL PLANAR DIODE

KDS127E Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	ULTRA SMALL, TES6, 6 PIN
Contacts	6
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-F6
Number of components	4
Number of terminals	6
Maximum operating temperature	150 °C
Maximum output current	0.1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.2 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	80 V
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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SEMICONDUCTOR

TECHNICAL DATA

ULTRA HIGH SPEED SWITCHING APPLICATION.

KDS127E

SILICON EPITAXIAL PLANAR DIODE

B

FEATURES

Low Forward Voltage

Fast Reverse Recovery Time

Ultra- Small Surface Mount Package

A1

B1

Small Total Capacitance

A

C

1

6

2

C

5

3

4

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Maximum (Peak) Reverse Voltage

Reverse Voltage

Maximum (Peak) Forward Current

Average Forward Current

Surge Current (10ms)

Power Dissipation

Junction Temperature

Storage Temperature Range

)

P

DIM

A

A1

B

B1

C

D

H

J

P

MILLIMETERS

_

1.6 + 0.05

_

1.0 + 0.05

_ 0.05

1.6 +

_

1.2 + 0.05

0.50

_

0.2 + 0.05

_

0.5 + 0.05

_

0.12 + 0.05

5

SYMBOL

V

RM

V

R

I

FM

I

O

I

FSM

P

D

T

j

T

stg

RATING

80

300 *

100 *

2*

200**

150

-55 150

UNIT

V

mA

A

mW

1. D1 ANODE

2. D2 CATHODE

3. D3/D4 ANODE/CATHODE

4. D3 ANODE

5. D4 CATHODE

6. D1/D2 ANODE/CATHODE

H

J

TES6

* Where D1, D2, D3, D4 are used independently or simultaneously,

the Maximum Ratings per diode are 50% of those of the single diode.

** Total Rating

EQUIVALENT CIRCUIT (TOP VIEW)

Marking

6

5

Type Name

4

6

5

4

D4

D1

1

2

D3

D2

3

US

1

2

3

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Forward Voltage

Reverse Current

Total Capacitance

SYMBOL

V

F

I

R

C

T

TEST CONDITION

I

F

=100mA

V

R

=80V

V

R

=6V, f=1MHz

MIN.

-

TYP.

-

MAX.

1.2

0.1

3.5

UNIT

V

A

pF

2007. 10. 31

Revision No : 0

D

1/3

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