BSM15GD100D datasheet, PDF - EEWORLD Datasheet

BSM15GD100D: DescriptionInsulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, POWER MODULE-17; CategoryDiscrete semiconductor The transistor; File Size50KB，1 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BSM15GD100D Overview

Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, POWER MODULE-17

Parameter Name	Attribute value
Maker	Infineon
Parts packaging code	MODULE
package instruction	POWER MODULE-17
Contacts	17
Reach Compliance Code	compliant
Shell connection	ISOLATED
Maximum collector current (IC)	15 A
Collector-emitter maximum voltage	1000 V
Configuration	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage	20 V
JESD-30 code	R-PUFM-D17
Number of components	6
Number of terminals	17
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	125 W
Certification status	Not Qualified
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal on time (ton)	15 ns
VCEsat-Max	5 V

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