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IRF634-018PBF

Description
Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size69KB,2 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance  
Download Datasheet Parametric View All

IRF634-018PBF Overview

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IRF634-018PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)300 mJ
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage250 V
Maximum drain current (ID)8.1 A
Maximum drain-source on-resistance0.45 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)250
Polarity/channel typeN-CHANNEL
Maximum power consumption environment74 W
Maximum pulsed drain current (IDM)32 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
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