Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT4100 Series
15 AMP
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SFT4100 __ __
│ └
Scre
ening
│
│
│
│
└
Package
3/
2/
HIGH SPEED
NPN TRANSISTOR
200 VOLTS
__
= Not Screen
TX = TX Level
TXV = TXV Level
S
= S Level
Features:
•
Fast Switching, t
f
= 60 nsec typ.
•
Very Low Leakage and Saturation
•
BVCEO 165 Volts Min
•
High Linear Gain
•
200ºC Operating Temperature
•
Gold Eutectic Die Attach
•
Available in hermetic isolated and “hot case” power
packages
•
Higher Current Devices Available
/3
= TO-3
S1 = SMD1
M = TO254
Maximum Ratings
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Continues Collector Current
Base Current
Power Dissipation
@ TC = 25ºC
Operating & Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D
Top & Tstg
Junction to
Case
R
θJC
Value
165
250
7
15
3
120
-65 to +200
1.46
Units
Volts
Volts
Volts
Amps
Amps
W
ºC
ºC/W
Maximum Thermal Resistance
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening to MIL-PRF-19500
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
TO-3
SMD1
TO-254
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0105B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT4100 Series
Symbol
I
C
= 200mA
I
C
= 200µA
I
E
= 50mA
V
CE
= 160 V
V
CE
= 250 V, V
EB
= 1.5 V
V
CE
=250V, V
EB
=1.5V, T
C
= 125C
V
EB
= 5 V
V
CE
= 4V, I
C
= 5A
V
CE
= 4V, I
C
= 8A
I
C
= 5.0A, I
B
= 500mA
I
C
= 8.0A, I
B
= 1.0A
I
C
= 8.0A, I
B
= 1.0A
V
CE
= 15V, I
C
= 1.0A, f = 10MHz
V
Clamp
= 200V, L = 500 uH
V
CE
= 30V, I
C
= 4.0A, t = 1s
V
CE
= 135V, I
C
= 0.15A, t= 1s
V
CC
= 150V,
I
C
= 8A,
I
B1
= I
B2
= 1A
SOA1
SOA2
t
ON
t
S
t
f
––
––
––
SMD1
100
1200
60
1000
1700
800
nsec
nsec
nsec
BV
CEO
BV
CBO
BV
EBO
I
CEO
I
CEX
I
EBO
h
FE
V
CE(Sat)
V
BE(Sat)
f
T
Min
165
-
7
––
––
––
15
8
––
––
––
8
8
Typ
200
250
15
0.03
0.01
1.0
0.01
30
30
0.25
0.35
1.12
20
Max
––
––
––
1000
1000
5000
1000
45
––
1.2
1.6
2.0
––
Units
Volts
Volts
Volts
uA
uA
uA
––
Volts
Volts
MHz
A
Electrical Characteristic
4/
Collector – Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Cutoff Current
Collector – Cutoff Current
Emitter – Cutoff Current
DC Current Gain *
Collector – Emitter Saturation Voltage *
Base – Emitter Saturation Voltage *
Current Gain Bandwidth Product
Clamped E
S/B
Collector Current
Safe Operating Area
ON Time
Storage Time
Fall Time
CASE OUTLINES:
TO-3
TO-254
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0105B
DOC
Microcontroller MCU
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