K7B163635B
K7B161835B
512Kx36 & 1Mx18 Synchronous SRAM
18Mb Sync. Burst SRAM Specification
100TQFP with Pb / Pb-Free
(RoHS compliant)
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* Samsung Electronics reserves the right to change products or specification without notice.
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Rev. 3.0 April 2006
K7B163635B
K7B161835B
Document Title
512Kx36 & 1Mx18 Synchronous SRAM
512Kx36 & 1Mx18-Bit Synchronous Burst SRAM
Revision History
Rev. No.
0.0
0.1
0.2
History
1. Initial draft
1. Update the DC current spec(I
CC
, I
SB
)
1. Change the ISB,ISB1,ISB2
- ISB ; from 120mA to 170mA
- ISB1 ; from 80mA to 150mA
- ISB2 ; from 80mA to 130mA
1. Remove the 1.8V Vdd voltage level
1. Remove the -85 speed bin
1. Finalize the datasheet
1. Add the overshoot timing
1. Change ordering information
Draft Date
Mar. 23. 2004
May. 21. 2004
Sep. 21. 2004
Remark
Advance
Preliminary
Preliminary
0.3
0.4
1.0
2.0
3.0
Oct. 18. 2004
Jan. 04. 2005
July 18. 2005
Feb. 16. 2006
Apr. 16. 2006
Preliminary
Preliminary
Final
Final
Final
-2-
Rev. 3.0 April 2006
K7B163635B
K7B161835B
512Kx36 & 1Mx18 Synchronous SRAM
512Kx36 & 1Mx18-Bit Synchronous Burst SRAM
FEATURES
• Synchronous Operation.
• On-Chip Address Counter.
• Self-Timed Write Cycle.
• On-Chip Address and Control Registers.
• V
DD
= 2.5 or 3.3V +/- 5% Power Supply.
• 5V Tolerant Inputs Except I/O Pins.
• Byte Writable Function.
• Global Write Enable Controls a full bus-width write.
• Power Down State via ZZ Signal.
• LBO Pin allows a choice of either a interleaved burst or a lin-
ear burst.
• Three Chip Enables for simple depth expansion with No Data
Contention only for TQFP.
• Asynchronous Output Enable Control.
• ADSP, ADSC, ADV Burst Control Pins.
• TTL-Level Three-State Output.
• 100-TQFP-1420A (Lead and Lead free package)
• Operating in commeical and industrial temperature range.
GENERAL DESCRIPTION
The K7B163635B and K7B161835B are 18,874,368-bit Syn-
chronous Static Random Access Memory designed for high
performance second level cache of Pentium and Power PC
based System.
It is organized as 512K(1M) words of 36(18) bits and integrates
address and control registers, a 2-bit burst address counter and
added some new functions for high performance cache RAM
applications; GW, BW, LBO, ZZ. Write cycles are internally self-
timed and synchronous.
Full bus-width write is done by GW, and each byte write is per-
formed by the combination of WEx and BW when GW is high.
And with CS
1
high, ADSP is blocked to control signals.
Burst cycle can be initiated with either the address status pro-
cessor(ADSP) or address status cache controller(ADSC)
inputs. Subsequent burst addresses are generated internally in
the system′s burst sequence and are controlled by the burst
address advance(ADV) input.
LBO pin is DC operated and determines burst sequence(linear
or interleaved).
ZZ pin controls Power Down State and reduces Stand-by cur-
rent regardless of CLK.
The K7B163635B and K7B161835B are fabricated using SAM-
SUNG′s high performance CMOS technology and is available
in a 100pin TQFP package. Multiple power and ground pins are
utilized to minimize ground bounce.
FAST ACCESS TIMES
PARAMETER
Cycle Time
Clock Access Time
Output Enable Access Time
Symbol
t
CYC
t
CD
t
OE
-75
8.5
7.5
3.5
Unit
ns
ns
ns
LOGIC BLOCK DIAGRAM
CLK
LBO
CONTROL
REGISTER
ADV
ADSC
BURST CONTROL
LOGIC
BURST
ADDRESS
COUNTER
A
0
~A
1
A
0
~A
18
or A
0
~A
19
ADDRESS
REGISTER
512Kx36, 1Mx18
MEMORY
ARRAY
A′
0
~A′
1
A
2
~A
18
or A
2
~A
19
ADSP
CS
1
CS
2
CS
2
GW
BW
WEx
(x=a,b,c,d or a,b)
OE
ZZ
DATA-IN
REGISTER
CONTROL
REGISTER
CONTROL
LOGIC
OUTPUT
BUFFER
DQa
0
~ DQd
7
or DQa0 ~ DQb7
DQPa ~ DQPd
DQPa,DQPb
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Rev. 3.0 April 2006
Embedded System
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