P6SMB220A datasheet, PDF - EEWORLD Datasheet

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P6SMB220A: Description600 W, UNIDIRECTIONAL, SILICON, TVS DIODE; CategoryDiscrete semiconductor diode; File Size831KB，3 Pages; ManufacturerCentral Semiconductor

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P6SMB220A Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE

P6SMB220A Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	SMB, 2 PIN
Contacts	2
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	UL RECOGNIZED
Maximum breakdown voltage	231 V
Minimum breakdown voltage	209 V
Breakdown voltage nominal value	220 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PDSO-C2
JESD-609 code	e0
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	185 V
surface mount	YES
technology	AVALANCHE
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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P6SMB6.8A

THRU

P6SMB250A

SURFACE MOUNT

UNI-DIRECTIONAL

GLASS PASSIVATED JUNCTION

SILICON TRANSIENT

VOLTAGE SUPPRESSOR

600 WATTS, 6.8 THRU 250 VOLTS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR P6SMB6.8A

Series types are Surface Mount Uni-Directional Glass

Passivated Junction Transient Voltage Suppressors

designed to protect voltage sensitive components from

high voltage transients.

THIS DEVICE IS MANUFACTURED WITH A GLASS

PASSIVATED CHIP FOR OPTIMUM RELIABILITY.

Note: For Bi-directional devices, please refer to the

P6SMB6.8CA Series data sheet.

SMB CASE

• This series is UL listed, UL file number E130224

MARKING CODE: SEE ELECTRICAL

CHARACTERISTICS TABLE

SYMBOL

PDM

IFSM

TJ, Tstg

600

100

-65 to +150

UNITS

W

A

°C

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

Peak Power Dissipation (Note 1)

Peak Forward Surge Current (JEDEC Method)

Operating and Storage Junction Temperature

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

BREAKDOWN

VOLTAGE

TYPE

VBR @ IT

MIN

(V)

P6SMB6.8A

P6SMB7.5A

P6SMB8.2A

P6SMB9.1A

P6SMB10A

P6SMB11A

P6SMB12A

P6SMB13A

P6SMB15A

P6SMB16A

P6SMB18A

P6SMB20A

P6SMB22A

P6SMB24A

P6SMB27A

P6SMB30A

P6SMB33A

P6SMB36A

P6SMB39A

6.45

7.13

7.79

8.65

9.5

10.5

11.4

12.4

14.3

15.2

17.1

19

20.9

22.8

25.7

28.5

31.4

34.2

37.1

NOM

(V)

6.8

7.5

8.2

9.1

10

11

12

13

15

16

18

20

22

24

27

30

33

36

39

MAX

(V)

7.14

7.88

8.61

9.55

10.5

11.6

12.6

13.7

15.8

16.8

18.9

21

23.1

25.2

28.4

31.5

34.7

37.8

41

IT

(mA)

10

1.0

TEST

CURRENT

WORKING

PEAK

REVERSE

VOLTAGE

VRWM

(V)

5.8

6.4

7.02

7.78

8.55

9.4

10.2

11.1

12.8

13.6

15.3

17.1

18.8

20.5

23.1

25.6

28.2

30.8

33.3

MAXIMUM

REVERSE

LEAKAGE

CURRENT

@ VRWM

IR

(µA)

1000

500

200

50

10

5.0

MAXIMUM

REVERSE

SURGE

CURRENT

(Note 1)

IRSM

(A)

57

53

50

45

41

38

36

33

28

27

24

22

20

18

16

14.4

13.2

12

11.2

MAXIMUM

REVERSE

VOLTAGE

@ IRSM

VRSM

(V)

10.5

11.3

12.1

13.4

14.5

15.6

16.7

18.2

21.2

22.5

25.2

27.7

30.6

33.2

37.5

41.4

45.7

49.9

53.9

MAXIMUM

TEMPERATURE

COEFFICIENT MARKING

CODE

ΘV

BR

(% / °C)

0.057

0.061

0.065

0.068

0.073

0.075

0.078

0.081

0.084

0.086

0.088

0.090

0.092

0.094

0.096

0.097

0.098

0.099

0.100

C6V8A

C7V5A

C8V2A

C9V1A

C10A

C11A

C12A

C13A

C15A

C16A

C18A

C20A

C22A

C24A

C27A

C30A

C33A

C36A

C39A

Notes: (1) Non-repetitive 10x1,000µs pulse.

R5 (1-March 2010)

P6SMB220A Related Products

	P6SMB220A	P6SMB250A	P6SMB6.8A_10
Description	600 W, UNIDIRECTIONAL, SILICON, TVS DIODE	600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA	600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Maximum breakdown voltage	231 V	262.5 V	231 V
Minimum breakdown voltage	209 V	237.5 V	209 V
Diode component materials	SILICON	SILICON	silicon
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS voltage SUPPRESSOR diode
Number of components	1	1	1
Number of terminals	2	2	2
polarity	UNIDIRECTIONAL	UNIDIRECTIONAL	unidirectional
surface mount	YES	YES	Yes
Terminal form	C BEND	C BEND	C BEND
Terminal location	DUAL	DUAL	pair
Is it lead-free?	Contains lead	Contains lead	-
Is it Rohs certified?	incompatible	incompatible	-
Maker	Central Semiconductor	Central Semiconductor	-
package instruction	SMB, 2 PIN	SMB, 2 PIN	-
Contacts	2	2	-
Reach Compliance Code	unknow	unknow	-
ECCN code	EAR99	EAR99	-
Other features	UL RECOGNIZED	UL RECOGNIZED	-
Breakdown voltage nominal value	220 V	250 V	-
Configuration	SINGLE	SINGLE	-
JESD-30 code	R-PDSO-C2	R-PDSO-C2	-
JESD-609 code	e0	e0	-
Maximum non-repetitive peak reverse power dissipation	600 W	600 W	-
Maximum operating temperature	150 °C	150 °C	-
Minimum operating temperature	-65 °C	-65 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-
Certification status	Not Qualified	Not Qualified	-
Maximum repetitive peak reverse voltage	185 V	214 V	-
technology	AVALANCHE	AVALANCHE	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-

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