P6SMB6.8A_10 datasheet, PDF - EEWORLD Datasheet

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P6SMB6.8A_10: Description600 W, UNIDIRECTIONAL, SILICON, TVS DIODE; Categorysemiconductor Discrete semiconductor; File Size831KB，3 Pages; ManufacturerCentral Semiconductor

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P6SMB6.8A_10 Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE

P6SMB6.8A_10 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Maximum breakdown voltage	231 V
Minimum breakdown voltage	209 V
Processing package description	ROHS COMPLIANT, SMB, 2 PIN
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	C BEND
terminal coating	tin lead
Terminal location	pair
Packaging Materials	Plastic/Epoxy
Craftsmanship	AVALANCHE
structure	single
Diode component materials	silicon
polarity	unidirectional
Diode type	TRANS voltage SUPPRESSOR diode
shutdown voltage	185 V
Maximum non-repetitive peak speed power	600 W

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P6SMB6.8A

THRU

P6SMB250A

SURFACE MOUNT

UNI-DIRECTIONAL

GLASS PASSIVATED JUNCTION

SILICON TRANSIENT

VOLTAGE SUPPRESSOR

600 WATTS, 6.8 THRU 250 VOLTS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR P6SMB6.8A

Series types are Surface Mount Uni-Directional Glass

Passivated Junction Transient Voltage Suppressors

designed to protect voltage sensitive components from

high voltage transients.

THIS DEVICE IS MANUFACTURED WITH A GLASS

PASSIVATED CHIP FOR OPTIMUM RELIABILITY.

Note: For Bi-directional devices, please refer to the

P6SMB6.8CA Series data sheet.

SMB CASE

• This series is UL listed, UL file number E130224

MARKING CODE: SEE ELECTRICAL

CHARACTERISTICS TABLE

SYMBOL

PDM

IFSM

TJ, Tstg

600

100

-65 to +150

UNITS

W

A

°C

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

Peak Power Dissipation (Note 1)

Peak Forward Surge Current (JEDEC Method)

Operating and Storage Junction Temperature

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

BREAKDOWN

VOLTAGE

TYPE

VBR @ IT

MIN

(V)

P6SMB6.8A

P6SMB7.5A

P6SMB8.2A

P6SMB9.1A

P6SMB10A

P6SMB11A

P6SMB12A

P6SMB13A

P6SMB15A

P6SMB16A

P6SMB18A

P6SMB20A

P6SMB22A

P6SMB24A

P6SMB27A

P6SMB30A

P6SMB33A

P6SMB36A

P6SMB39A

6.45

7.13

7.79

8.65

9.5

10.5

11.4

12.4

14.3

15.2

17.1

19

20.9

22.8

25.7

28.5

31.4

34.2

37.1

NOM

(V)

6.8

7.5

8.2

9.1

10

11

12

13

15

16

18

20

22

24

27

30

33

36

39

MAX

(V)

7.14

7.88

8.61

9.55

10.5

11.6

12.6

13.7

15.8

16.8

18.9

21

23.1

25.2

28.4

31.5

34.7

37.8

41

IT

(mA)

10

1.0

TEST

CURRENT

WORKING

PEAK

REVERSE

VOLTAGE

VRWM

(V)

5.8

6.4

7.02

7.78

8.55

9.4

10.2

11.1

12.8

13.6

15.3

17.1

18.8

20.5

23.1

25.6

28.2

30.8

33.3

MAXIMUM

REVERSE

LEAKAGE

CURRENT

@ VRWM

IR

(µA)

1000

500

200

50

10

5.0

MAXIMUM

REVERSE

SURGE

CURRENT

(Note 1)

IRSM

(A)

57

53

50

45

41

38

36

33

28

27

24

22

20

18

16

14.4

13.2

12

11.2

MAXIMUM

REVERSE

VOLTAGE

@ IRSM

VRSM

(V)

10.5

11.3

12.1

13.4

14.5

15.6

16.7

18.2

21.2

22.5

25.2

27.7

30.6

33.2

37.5

41.4

45.7

49.9

53.9

MAXIMUM

TEMPERATURE

COEFFICIENT MARKING

CODE

ΘV

BR

(% / °C)

0.057

0.061

0.065

0.068

0.073

0.075

0.078

0.081

0.084

0.086

0.088

0.090

0.092

0.094

0.096

0.097

0.098

0.099

0.100

C6V8A

C7V5A

C8V2A

C9V1A

C10A

C11A

C12A

C13A

C15A

C16A

C18A

C20A

C22A

C24A

C27A

C30A

C33A

C36A

C39A

Notes: (1) Non-repetitive 10x1,000µs pulse.

R5 (1-March 2010)

P6SMB6.8A_10 Related Products

	P6SMB6.8A_10	P6SMB220A	P6SMB250A
Description	600 W, UNIDIRECTIONAL, SILICON, TVS DIODE	600 W, UNIDIRECTIONAL, SILICON, TVS DIODE	600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
Number of terminals	2	2	2
Number of components	1	1	1
Maximum breakdown voltage	231 V	231 V	262.5 V
Minimum breakdown voltage	209 V	209 V	237.5 V
surface mount	Yes	YES	YES
Terminal form	C BEND	C BEND	C BEND
Terminal location	pair	DUAL	DUAL
Diode component materials	silicon	SILICON	SILICON
polarity	unidirectional	UNIDIRECTIONAL	UNIDIRECTIONAL
Diode type	TRANS voltage SUPPRESSOR diode	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
Is it lead-free?	-	Contains lead	Contains lead
Is it Rohs certified?	-	incompatible	incompatible
Maker	-	Central Semiconductor	Central Semiconductor
package instruction	-	SMB, 2 PIN	SMB, 2 PIN
Contacts	-	2	2
Reach Compliance Code	-	unknow	unknow
ECCN code	-	EAR99	EAR99
Other features	-	UL RECOGNIZED	UL RECOGNIZED
Breakdown voltage nominal value	-	220 V	250 V
Configuration	-	SINGLE	SINGLE
JESD-30 code	-	R-PDSO-C2	R-PDSO-C2
JESD-609 code	-	e0	e0
Maximum non-repetitive peak reverse power dissipation	-	600 W	600 W
Maximum operating temperature	-	150 °C	150 °C
Minimum operating temperature	-	-65 °C	-65 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED
Certification status	-	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	-	185 V	214 V
technology	-	AVALANCHE	AVALANCHE
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED

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