ZXT10N20DE6
20V NPN LOW SATURATION SWITCHING TRANSISTOR IN SOT26
DE6
Features
BV
CEO
> 20V
I
C
= 3.5A Continuous Collector Current
I
CM
= 19A Peak Pulse Current
R
CE(SAT)
= 55mΩ for a Low Equivalent On-Resistance
Low Saturation Voltage (90mV max @ 1A)
h
FE
Characterized up to 6A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads.
Solderable per MIL-STD-202, Method 208
Weight: 0.015 grams (Approximate)
ADVANCE INFORMATION
Applications
DC–DC Converters
Power Management Functions
Power Switches
Motor Control
SOT26
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Note 4)
Product
ZXT10N20DE6TA
Notes:
Compliance
AEC-Q101
Marking
618
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT26
618 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
618
Date Code Key
Year
2015
Code
C
Month
Code
Jan
1
2016
D
Feb
2
2017
E
Mar
3
2018
F
Apr
4
YM
2019
G
May
5
2020
H
Jun
6
2021
I
Jul
7
Aug
8
2022
J
Sep
9
2023
K
Oct
O
2024
L
Nov
N
2025
M
Dec
D
ZXT10N20DE6
Document Number: DS33622 Rev. 2 - 2
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October 2015
© Diodes Incorporated
ZXT10N20DE6
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
V
CBO
V
CEO
V
EBO
I
B
I
C
I
CM
Value
20
20
5
500
3.5
19
DE6
Unit
V
V
V
mA
A
A
ADVANCE INFORMATION
Base Current
Continuous Collector Current
Peak Pulse Collector Current
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Linear Derating Factor
(Note 5)
P
D
(Note 6)
(Note 5)
(Note 6)
(Note 7)
R
θJA
R
θJL
T
J
, T
STG
Symbol
Value
1.1
8.8
1.7
13.6
113
73
18.6
-55 to +150
C
Unit
W
mW/°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
C/W
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the collector lead on 25mm x 25mm 1oz copper that is on single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as Note 6, except the device is measured at t
5 sec.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXT10N20DE6
Document Number: DS33622 Rev. 2 - 2
2 of 7
www.diodes.com
October 2015
© Diodes Incorporated
ZXT10N20DE6
Thermal Characteristics and Derating Information
DE6
ADVANCE INFORMATION
I
C
Collector Current (A)
10
Max Power Dissipation (W)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100 120 140 160
1
DC
1s
100ms
10ms
1ms
Single Pulse T
amb
=25°C
100µs
100m
100m
1
10
V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Thermal Resistance (°C/W)
120
100
80
60
40
20
D=0.1
D=0.5
Derating Curve
D=0.2
Single Pulse
D=0.05
0
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
ZXT10N20DE6
Document Number: DS33622 Rev. 2 - 2
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October 2015
© Diodes Incorporated
ZXT10N20DE6
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
CES
Min
20
20
5
—
—
—
200
DC Current Gain
h
FE
300
200
100
—
Collector-Emitter Saturation Voltage
V
CE(sat)
—
—
—
Base-Emitter Turn-On Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Turn-Off Time
Note:
DE6
Max
—
—
—
100
100
100
—
—
—
—
15
150
135
250
1
0.9
—
30
—
—
V
V
MHz
pF
ns
ns
mV
—
Unit
V
V
V
nA
nA
nA
I
C
= 100µA
I
C
= 10mA
I
E
= 100µA
V
CB
= 16V
V
EB
= 4V
V
CES
= 16V
I
C
= 10mA, V
CE
= 2V
I
C
= 0.2A, V
CE
= 2V
I
C
= 2A, V
CE
= 2V
I
C
= 6A, V
CE
= 2V
I
C
= 100mA, I
B
= 10mA
I
C
= 1A, I
B
= 10mA
I
C
= 2A, I
B
= 50mA
I
C
= 3.5A, I
B
= 100mA
I
C
= 3.5A, I
B
= 100mV
I
C
= 3.5A, V
CE
= 2V
V
CE
= 10V, I
C
= 50mA, f = 100MHz
V
CB
= 10V, f = 1MHz
V
CC
= 10V, I
C
= 3A
I
B1
= I
B2
= 50mA
Test Condition
Typ
100
27
8.3
—
—
—
400
450
360
180
8
90
115
190
0.96
0.85
140
23
170
400
ADVANCE INFORMATION
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter Cutoff Current
Collector-Emitter Cutoff Current
ON CHARACTERISTICS
(Note 9)
V
BE(sat)
V
BE(on)
f
T
C
obo
t
(on)
t
(off)
—
—
100
—
—
—
9. Measured under pulsed conditions. Pulse width
300μs. Duty cycle
2%.
ZXT10N20DE6
Document Number: DS33622 Rev. 2 - 2
4 of 7
www.diodes.com
October 2015
© Diodes Incorporated
ZXT10N20DE6
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
DE6
0.25
ADVANCE INFORMATION
Tamb=25°C
I
C
/I
B
=50
100m
0.20
100°C
V
CE(SAT)
(V)
V
CE(SAT)
(V)
I
C
/I
B
=100
0.15
25°C
10m
I
C
/I
B
=50
I
C
/I
B
=10
0.10
-55°C
0.05
0.00
1m
1m
1m
10m
100m
1
10
10m
100m
1
10
I
C
Collector Current (A)
I
C
Collector Current (A)
V
CE(SAT)
v I
C
630
1.2
V
CE
=2V
100°C
V
CE(SAT)
v I
C
540
450
360
270
1.0
I
C
/I
B
=50
1.0
0.8
0.6
0.4
0.2
0.0
1m
Typical Gain (h
FE
)
Normalised Gain
25°C
V
BE(SAT)
(V)
0.8
-55°C
0.6
25°C
100°C
-55°C
180
90
0.4
1m
10m
100m
1
10
10m
100m
1
10
0
I
C
Collector Current (A)
I
C
Collector Current (A)
h
FE
v I
C
1.0
V
CE
=2V
V
BE(SAT)
v I
C
V
BE(ON)
(V)
0.8
-55°C
0.6
25°C
0.4
1m
10m
100°C
100m
1
10
I
C
Collector Current (A)
V
BE(ON)
v I
C
ZXT10N20DE6
Document Number: DS33622 Rev. 2 - 2
5 of 7
www.diodes.com
October 2015
© Diodes Incorporated