ZXTD4591E6
COMPLEMENTARY 60V NPN/PNP MEDIUM POWER TRANSISTORS IN SOT26
Features
NPN Transistor
BV
CEO
> 60V
I
C
= 1A Continuous Collector Current
Low Saturation Voltage (500mV max @ 1A)
h
FE
characterised up to 2A
R
SAT
= 210mΩ @1A for a Low Equivalent On-Resistance
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads;
Solderable per MIL-STD-202, Method 208
Weight: 0.015 grams (Approximate)
ADVANCE INFORMATION
PNP Transistor
BV
CEO
> -60V
I
C
= -1A Continuous Collector Current
Low Saturation Voltage (-600mV max @ -1A)
hFE characterised up to 2A
R
SAT
= 355mΩ @1A for a Low Equivalent On-Resistance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
SOT26
Applications
MOSFET Gate Driver
Low Power Motor Drive
Low Power DC-DC Converters
C1
C2
B1
B2
E1
Top View
NPN Transistor
Device Symbol
E2
PNP Transistor
Top View
Pin-Out
Ordering Information
(Note 4)
Product
ZXTD4591E6TA
Notes:
Compliance
AEC-Q101
Marking
4591
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT26
4591
Date Code Key
Year
2015
Code
C
Month
Code
Jan
1
4591 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
2016
D
Feb
2
2017
E
Mar
3
2018
F
Apr
4
YM
2019
G
May
5
2020
H
Jun
6
2021
I
Jul
7
Aug
8
2022
J
Sep
9
2023
K
Oct
O
2024
L
Nov
N
2025
M
Dec
D
ZXTD4591E6
Document Number: DS33652 Rev: 2 - 2
1 of 8
www.diodes.com
November 2015
© Diodes Incorporated
ZXTD4591E6
NPN - Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
Value
80
60
7
2
1
500
Unit
V
V
V
A
A
mA
ADVANCE INFORMATION
PNP - Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
Value
-80
-60
-7
-2
-1
-500
Unit
V
V
V
A
A
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction To Lead
Operating and Storage Temperature Range
(Note 6)
P
D
(Note 7)
(Note 6)
(Note 7)
(Note 8)
R
JA
R
JL
T
J
, T
STG
Symbol
Value
1.1
8.8
1.7
13.6
113
73
74
-55 to +150
Unit
W
mW/°C
°C/W
°C/W
°C
ESD Ratings
(Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
6. For a device mounted with the collector lead on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; the device is measured
under still air conditions whilst operating in a steady-state. Two active dice running at equal power with heatsink split 50% to each collector.
7. Same as Note 6, except the device is measured at t < 5 seconds.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTD4591E6
Document Number: DS33652 Rev: 2 - 2
2 of 8
www.diodes.com
November 2015
© Diodes Incorporated
ZXTD4591E6
NPN - Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS
(Note 10)
DC Current Gain
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
CES
Min
80
60
7
100
100
80
30
180
Typ
Max
100
100
100
300
0.25
0.5
1.1
1.0
10
Unit
V
V
V
nA
nA
nA
Test Condition
I
C
= 100µA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 100µA, I
C
= 0
V
CB
= 60V
V
EB
=5.6
V
CE
= 60V
I
C
= 1mA, V
CE
= 5V
I
C
= 500mA, V
CE
= 5V
I
C
= 1A, V
CE
= 5V
I
C
= 2A, V
CE
= 5V
I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 100mA
I
C
= 1, V
CE
= 5V
V
CB
= 10V, f = 1.0MHz
I
C
= 50mA, V
CE
= 10V
f = 100MHz
ADVANCE INFORMATION
h
FE
V
V
V
V
pF
MHz
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain Bandwidth Product
Note:
V
CE(sat)
V
BE(sat)
V
BE(on)
C
obo
f
T
10. Measured under pulsed conditions. Pulse width
300µs. Duty cycle
2%.
ZXTD4591E6
Document Number: DS33652 Rev: 2 - 2
3 of 8
www.diodes.com
November 2015
© Diodes Incorporated
ZXTD4591E6
NPN - Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
ADVANCE INFORMATION
ZXTD4591E6
Document Number: DS33652 Rev: 2 - 2
4 of 8
www.diodes.com
November 2015
© Diodes Incorporated
ZXTD4591E6
PNP - Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS
(Note 10)
DC Current Gain
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
CES
Min
-80
-60
-7
100
100
80
15
150
Typ
Max
-100
-100
-100
300
-0.3
-0.6
-1.2
-1.0
10
Unit
V
V
V
nA
nA
nA
Test Condition
I
C
= -100µA, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -100µA, I
C
= 0
V
CB
= -60V
V
EB
= -5.6V
V
CE
= -60V
I
C
= -1mA, V
CE
= -5V
I
C
= -500mA, V
CE
= -5V
I
C
= -1A, V
CE
= -5V
I
C
= -2A, V
CE
= -5V
I
C
= -500mA, I
B
= -50mA
I
C
= -1A, I
B
= -100mA
I
C
= -1A, I
B
= -100mA
I
C
= -1A, V
CE
= -5V
V
CB
= -10V, f = 1.0MHz
I
C
= -50mA, V
CE
= -10V
f = 100MHz
ADVANCE INFORMATION
h
FE
V
V
V
V
pF
MHz
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain Bandwidth Product
Note:
V
CE(sat)
V
BE(sat)
V
BE(on)
C
obo
f
T
10. Measured under pulsed conditions. Pulse width
300µs. Duty cycle
2%.
ZXTD4591E6
Document Number: DS33652 Rev: 2 - 2
5 of 8
www.diodes.com
November 2015
© Diodes Incorporated
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