Preliminary
Datasheet
RJK4007DPP-M0
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
R
DS(on)
= 0.47
typ. (at I
D
= 7 A, V
GS
= 10 V, Ta = 25C)
Low leakage current
High speed switching
R07DS0229EJ0100
Rev.1.00
Dec 15, 2010
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Single pulse
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Pch
ch-c
Tch
Tstg
Note2
Ratings
400
30
7.6
30
7.6
30
14
26.1
32
3.9
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0229EJ0100 Rev.1.00
Dec 15, 2010
Page 1 of 6
RJK4007DPP-M0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
400
—
—
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
3.5
0.47
850
140
20
25
30
90
35
24.5
5
10
0.9
230
Max
—
10
0.1
4.0
0.55
—
—
—
—
—
—
—
—
—
—
1.5
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 1 mA, V
GS
= 0
V
DS
= 400 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 7 A, V
GS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 7 A
V
GS
= 10 V
R
L
= 28.6
Rg = 25
V
DD
= 320 V
V
GS
= 10 V
I
D
= 14 A
I
F
= 14 A, V
GS
= 0
Note4
I
F
= 14 A, V
GS
= 0
di
F
/dt = 100 A/s
R07DS0229EJ0100 Rev.1.00
Dec 15, 2010
Page 2 of 6
RJK4007DPP-M0
Preliminary
Main Characteristics
Maximum Safe Operation Area
100
10
Typical Output Characteristics
6V
5.4 V
10
Drain Current I
D
(A)
00
μ
s
Drain Current I
D
(A)
10
PW
μ
s
7V
Pulse Test
Ta = 25°C
5.2 V
=1
8
10 V
6
1
0.1
Operation in this
area is limited by
R
DS(on)
5V
4.9 V
4.8 V
4
0.01
Tc = 25°C
1 shot
10
100
1000
2
4.7 V
V
GS
= 4.5 V
0.001
1
0
4
8
12
16
20
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
10
Pulse Test
V
GS
= 10 V
Ta = 25°C
Typical Transfer Characteristics
20
V
DS
= 10 V
Pulse Test
−25°C
25°C
12
Tc = 75°C
Drain Current I
D
(A)
16
1
8
4
0
2
4
6
8
10
0.1
0.1
1
10
100
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
Pulse Test
V
GS
= 10 V
1.6
I
D
= 14 A
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Body-Drain Diode Reverse
Recovery Time (Typical)
1000
1.2
Reverse Recovery Time trr (ns)
2.0
100
0.8
3A
7A
0.4
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
1
10
100
0
-25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Reverse Drain Current I
DR
(A)
R07DS0229EJ0100 Rev.1.00
Dec 15, 2010
Page 3 of 6
RJK4007DPP-M0
Typical Capacitance vs.
Drain to Source Voltage (Typical)
Drain to Source Voltage V
DS
(V)
10000
Preliminary
Dynamic Input Characteristics (Typical)
I
D
= 14 A
Ta = 25
°C
V
GS
12
V
DS
V
DD
= 320 V
200 V
100 V
8
1000
Ciss
300
100
Coss
10
V
GS
= 0
f = 1 MHz
Ta = 25°C
100
200
300
Crss
200
100
V
DD
= 320 V
200 V
100 V
8
16
24
32
4
1
0
0
40
0
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage V
GS(off)
(V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
20
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
V
DS
= 10 V
Reverse Drain Current I
DR
(A)
16
V
GS
= 0
Pulse Test
Ta = 25
°C
4
12
3
I
D
= 10 mA
1 mA
2
1
0.1 mA
8
4
0
0.4
0.8
1.2
1.6
2.0
0
-25
0
25
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Case Temperature
Tc (°C)
R07DS0229EJ0100 Rev.1.00
Dec 15, 2010
Page 4 of 6
Gate to Source Voltage V
GS
(V)
400
16
Capacitance C (pF)
RJK4007DPP-M0
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γs
(t)
10
Tc = 25°C
Preliminary
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
θch
– c (t) =
γ
s (t) •
θch
– c
θch
– c = 3.9°C/W, Tc = 25°C
0.01
p
ot
1sh
e
uls
P
DM
PW
T
D=
PW
T
0.001
10
μ
100
μ
1m
10 m
100 m
1
10
100
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
25
Ω
Vin
10 V
V
DD
=200 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0229EJ0100 Rev.1.00
Dec 15, 2010
Page 5 of 6
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