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RJK4007DPP-M0-T2

Description
Silicon N Channel MOS FET High Speed Power Switching
File Size72KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RJK4007DPP-M0-T2 Overview

Silicon N Channel MOS FET High Speed Power Switching

Preliminary
Datasheet
RJK4007DPP-M0
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
R
DS(on)
= 0.47
typ. (at I
D
= 7 A, V
GS
= 10 V, Ta = 25C)
Low leakage current
High speed switching
R07DS0229EJ0100
Rev.1.00
Dec 15, 2010
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Single pulse
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Pch
ch-c
Tch
Tstg
Note2
Ratings
400
30
7.6
30
7.6
30
14
26.1
32
3.9
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0229EJ0100 Rev.1.00
Dec 15, 2010
Page 1 of 6

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