EEWORLDEEWORLDEEWORLD

Part Number

Search

SHD225611

Description
HERMETIC POWER MOSFET N-CHANNEL
CategoryDiscrete semiconductor    The transistor   
File Size71KB,3 Pages
ManufacturerSENSITRON
Websitehttp://www.sensitron.com/
Download Datasheet Parametric Compare View All

SHD225611 Overview

HERMETIC POWER MOSFET N-CHANNEL

SHD225611 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSENSITRON
Parts packaging codeTO-254AA
package instructionFLANGE MOUNT, S-XSFM-P3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage900 V
Maximum drain current (ID)12 A
Maximum drain-source on-resistance0.9 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-XSFM-P3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)48 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 307, REV –
Formerly Part Number SHD2257
SHD225611
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
œ
900 Volt, 0.90 Ohm, 12A MOSFET
œ
Isolated Hermetic Metal Package
œ
Fast Switching
œ
Low R
DS (on)
œ
Similar to Industry Part Type - IXTM12N90
MAXIMUM RATINGS
RATING
GATE TO SOURCE VOLTAGE (continuous)
ON-STATE DRAIN CURRENT
PULSED DRAIN CURRENT
@ T
C
= 25•C
OPERATING AND STORAGE TEMPERATURE
TOTAL DEVICE DISSIPATION @ T
C
= 25•C
ALL RATINGS ARE AT T
C
= 25•C UNLESS OTHERWISE SPECIFIED.
SYMBOL
V
GS
I
D
I
DM
T
J
/T
STG
P
D
BV
DSS
MIN.
-
-
-
-55
-
900
-
2.0
6.0
-
-
-
TYP.
-
-
-
-
-
-
-
-
12
-
-
20
33
63
32
-
900
4500
315
65
-
MAX.
–20
12
48
+150
180
-
UNITS
Volts
Amps
Amps
•C
Watts
Volts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= 3.0
mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= 10V, I
D
= 0.5œI
D25
GATE THRESHOLD VOLTAGE
V
DS
= V
GS
, I
D
= 250mA
FORWARD TRANSCONDUCTANCE
V
DS
= 10V; I
D
= 0.5œI
D25
ZERO GATE VOLTAGE DRAIN CURRENT
V
GS
= 0V, V
DS
= 0.8œ V
DSS
T
J
= 125•C
GATE TO SOURCE LEAKAGE FORWARD
V
GS
= 20V
GATE TO SOURCE LEAKAGE REVERSE
V
GS
= -20V
TURN ON DELAY TIME
V
DS
= 0.5œV
DSS’,
RISE TIME
I
D
= 0.5 I
D25,
TURN OFF DELAY TIME
R
G
= 2.0W,
FALL TIME
V
GS
= 10V
DIODE FORWARD VOLTAGE
I
F
= I
S’
V
GS
= 0V
Pulse test, t
ˆ
300
ms,
duty cycle d
ˆ
2 %
REVERSE RECOVERY TIME
I
f
= I
S
,
di/dt = 100A/msec, V
R
= 100V
INPUT CAPACITANCE
V
GS
= 0 V
OUTPUT CAPACITANCE
V
DS
= 25 V
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
THERMAL RESISTANCE, JUNCTION TO CASE
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
C
iss
C
oss
C
rss
R
thJC
0.90
4.5
-
0.25
1.0
100
-100
50
50
100
50
1.5
-
-
0.7
W
Volts
S(1/W)
mA
nA
nsec
Volts
nsec
pF
•C/W
-
-
-
-
 
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - www.sensitron.com E-Mail Address - sales@sensitron.com
 
 
 
 
 
 
 

SHD225611 Related Products

SHD225611 SHD2257
Description HERMETIC POWER MOSFET N-CHANNEL HERMETIC POWER MOSFET N-CHANNEL

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 547  1425  123  2257  246  12  29  3  46  5 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号