AT-42086
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-42086 is a general purpose NPN bipolar tran-
sistor that offers excellent high frequency performance.
The AT-42086 is housed in a low cost surface mount .085"
diameter plastic package. The 4 micron emitter-to-emitter
pitch enables this transistor to be used in many different
functions. The 20 emitter finger interdigitated geometry
yields a medium sized transistor with impedances that are
easy to match for low noise and medium power applica-
tions. Applications include use in wireless systems as an
LNA, gain stage, buffer, oscillator, and mixer. An optimum
noise match near 50Ω up to 1 GHz, makes this device easy
to use as a low noise amplifier.
The AT-42086 bipolar transistor is fabricated using Avago’s
10 GHz f
T
Self-Aligned-Transistor (SAT) process. The die is
nitride passivated for surface protection. Excellent device
uniformity, performance and reliability are produced by
the use of ion-implantation, self-alignment techniques,
and gold metalization in the fabrication of this device.
Features
•
High Output Power:
20.5 dBm Typical P
1 dB
at 2.0 GHz
•
High Gain at 1 dB Compression:
13.5 dB Typical G
1 dB
at 2.0 GHz
•
Low Noise Figure:
1.9 dB Typical NF
O
at 2.0 GHz
•
High Gain-Bandwidth Product: 8.0 GHz Typical f
T
•
Surface Mount Plastic Package
•
Tape-and-Reel Packaging Option Available
•
Lead-free Option Available
86 Plastic Package
Pin Connections
EMITTER
4
420
BASE
1
COLLECTOR
3
2
EMITTER
AT-42086 Absolute Maximum Ratings
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2,3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum
[1]
1.5
20
12
80
500
150
-65 to 150
Thermal Resistance
[2]
:
θ
jc
= 140°C/W
Notes:
1. Permanent damage may occur if any
of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 7.1 mW/°C for T
C
> 80°C.
Electrical Specifications, T
A
= 25°C
Symbol
|S
21E
|
2
Parameters and Test Conditions
Insertion Power Gain; V
CE
= 8 V, I
C
= 35 mA
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f= 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
Units
dB
Min.
15.0
Typ.
16.5
10.5
4.5
20.5
20.0
13.5
9.0
1.9
3.5
13.0
9.0
8.0
Max.
P
1 dB
G
1 dB
NF
O
G
A
f
T
h
FE
I
CBO
I
EBO
C
CB
Note:
Power Output @ 1 dB Gain Compression
V
CE
= 8 V, I
C
= 35 mA
1 dB Compressed Gain; V
CE
= 8 V, I
C
= 35 mA
Optimum Noise Figure: V
CE
= 8 V, I
C
= 10 mA
Gain @ NF
O
; V
CE
= 8 V, I
C
= 10 mA
Gain Bandwidth Product: V
CE
= 8 V, I
C
= 35 mA
Forward Current Transfer Ratio; V
CE
= 8 V, I
C
= 35 mA
Collector Cutoff Current; V
CB
= 8 V
Emitter Cutoff Current; V
EB
= 1 V
Collector Base Capacitance
[1]
: V
CB
= 8 V, f = 1 MHz
dBm
dB
dB
dB
GHz
—
µA
µA
pF
30
150
270
0.2
2.0
0.32
1. For this test, the emitter is grounded.
2
AT-42086 Typical Performance, T
A
= 25°C
24
P
1 dB
(dBm)
2.0 GHz
20
1.0 GHz
40
35
30
MSG
20
4.0 GHz
16
|S
21E
|
2
GAIN (dB)
P
1dB
2.0 GHz
GAIN (dB)
16
12
25
20
15
|S
21E
|
2
4.0 GHz
MAG
2.0 GHz
12
G
1 dB
(dB)
G
1dB
8
10
5
8
4.0 GHz
4
4
0
10
20
30
I
C
(mA)
40
50
0
0
10
20
30
I
C
(mA)
40
50
0
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 1. Output Power and 1 dB Compressed Gain vs.
Collector Current and Frequency. V
CE
= 8 V.
Figure 2. Insertion Power Gain vs. Collector Current
and Frequency. V
CE
= 8 V.
Figure 3. Insertion Power Gain, Maximum Available
Gain and Maximum Stable Gain vs. Frequency.
V
CE
= 8 V, I
C
= 35 mA.
24
21
18
15
GAIN (dB)
12
9
6
3
0
0.5
NF
O
G
A
4
3
2
1
1.0
2.0
3.0
0
4.0 5.0
NF
O
(dB)
FREQUENCY (GHz)
Figure 4. Noise Figure and Associated Gain vs.
Frequency. V
CE
= 8 V, I
C
= 10 mA.
3
AT-42086 Typical Scattering Parameters,
Common Emitter, Z
O
= 50 Ω, T
A
= 25°C, V
CE
= 8 V, I
C
= 10 mA
Freq.
S
11
S
21
GHz
Mag.
Ang.
dB
Mag.
Ang.
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
.68
.63
.63
.65
.66
.69
.71
.73
.75
.78
.80
.82
.85
-48
-141
-176
164
151
142
132
123
115
108
101
95
89
28.0
20.9
15.4
12.0
9.5
7.8
6.2
4.8
3.6
2.6
1.6
0.6
-0.2
25.12
11.07
5.87
3.98
2.99
2.44
2.04
1.74
1.51
1.34
1.20
1.08
0.97
153
102
80
65
53
45
34
24
14
5
-4
-12
-21
dB
-36.0
-29.9
-27.4
-26.0
-23.9
-23.1
-21.6
-19.7
-18.3
-17.2
-16.0
-14.8
-14.0
S
12
Mag.
.016
.032
.043
.050
.064
.070
.084
.104
.122
.138
.159
.182
.200
S
22
Ang.
65
42
43
46
52
53
54
53
51
50
46
40
35
Mag.
.91
.54
.43
.40
.38
.36
.34
.33
.30
.31
.31
.32
.34
Ang.
-15
-30
-30
-34
-40
-46
-54
-67
-80
-94
-110
-129
-148
AT-42086 Typical Scattering Parameters,
Common Emitter, Z
O
= 50 Ω, T
A
= 25°C, V
CE
= 8 V, I
C
= 35 mA
Freq.
S
11
S
21
GHz
Mag.
Ang.
dB
Mag.
Ang.
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
.48
.57
.59
.61
.63
.68
.68
.71
.73
.76
.78
.81
.84
-94
-168
168
154
143
137
127
118
111
104
98
91
85
32.8
22.4
16.5
13.0
10.5
8.7
7.0
5.7
4.5
3.5
2.4
1.6
0.7
43.62
13.21
6.69
4.48
3.36
2.72
2.25
1.92
1.69
1.49
1.32
1.20
1.08
137
92
75
62
51
43
33
24
14
5
-3
-12
-20
dB
-37.7
-32.6
-28.7
-24.8
-23.0
-21.0
-19.7
-18.4
-17.3
-15.9
-15.2
-14.3
-13.4
S
12
Mag.
.013
.023
.037
.057
.071
.089
.104
.121
.136
.161
.174
.193
.213
S
22
Ang.
65
57
62
64
61
56
58
55
49
46
43
36
31
Mag.
.77
.39
.33
.31
.29
.26
.25
.24
.20
.21
.21
.22
.25
Ang.
-25
-28
-27
-31
-37
-45
-53
-65
-80
-95
-115
-136
-156
AT-42086 Noise Parameters:
V
CE
= 8 V, I
C
= 10 mA
Freq.
GHz
0.1
0.5
1.0
2.0
4.0
NF
O
dB
1.0
1.1
1.5
1.9
3.5
Γ
opt
Ang
8
62
168
-146
-100
Mag
.04
.03
.06
.25
.58
R
N
/50
0.13
0.12
0.12
0.12
0.52
4
Ordering Information
Part Numbers
AT-42086-BLKG
AT-42086-TR1G
AT-42086-TR2G
86 Plastic Package Dimensions
No. of Devices
100
1000
4000
Comments
Bulk
7" Reel
13" Reel
45°
1
C
L
3
2.34
±
0.38
(0.092
±
0.015)
2
2.67
±
0.38
(0.105
±
0.15)
5° TYP.
0.203
±
0.051
(0.006
±
0.002)
0.51
±
0.13
(0.020
±
0.005)
4
1.52
±
0.25
(0.060
±
0.010)
0.66
±
0.013
(0.026
±
0.005)
0.30 MIN
(0.012 MIN)
8° MAX
0° MIN
2.16
±
0.13
(0.085
±
0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2008 Avago Technologies. All rights reserved. Obsoletes 5989-2656EN
AV02-1460EN - August 8, 2008
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