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3.0SMCJ36C

Description
3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size49KB,4 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Download Datasheet View All

3.0SMCJ36C Overview

3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB

Certificate TH97/10561QM
Certificate TW00/17276EM
3.0SMCJ11C - 220CA
Stand-off Voltage :
11 to 220V
Peak Pulse Power :
3000 W
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
SMC (DO-214AB)
0.060(1.52)
0.030(0.76)
0.320(8.13)
0.305(7.75)
0.280(7.11)
0.260(6.60)
FEATURES :
* 3000W peak pulse power capability with
a 10/1000µs waveform
* Excellent clamping capability
* Low inductance
* High temperature soldering : 250 °C/10
seconds at terminals.
* Built-in stran relief
* Pb / RoHS Free
0.008(0.203)
0.004(0.102)
0.121(3.07)
0.115(2.92)
0.245(6.22)
0.220(5.59)
0.103(2.62)
0.079(2.00)
0.012(0.305)
0.006(0.152)
MECHANICAL DATA
*
*
*
*
*
Case : SMC Molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Lead Formed for Surface Mount
Mounting position : Any
Weight : 0.21 gram
Dimensions in inches and (millimeter)
DEVICES FOR UNIPOLAR APPLICATIONS
For uni-directional without "C"
Electrical characteristics apply in both directions
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified.
Rating
Peak Pulse Power Dissipation on 10/1000 µs waveform
Peak Pulse Current on 10/1000 s waveform
(2)(3)
(1)
(1) (2)
Symbol
P
PPM
I
PPM
I
FSM
T
J
, T
STG
Value
3000
See Next Table
200
- 55 to + 150
Unit
W
A
A
°
C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load
Operating Junction and Storage Temperature Range
Notes :
(1) Non-repetitive Current pulse, per Fig. 3 and derated above Ta = 25 °C per Fig. 1
(2) Mounted on 5.0 mm2 (0.013 thick) land areas.
(3) Measured on 8.3 ms , single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum.
Page 1 of 4
Rev. 04 : June 10, 2006
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