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TB10S

Description
Ordinary rectifier bridge, 1000V, 0.8A, 30A, 0.95V, 0.4A, 10uA
CategoryDiscrete semiconductor    Ordinary rectifier bridge   
File Size1MB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric Compare View All

TB10S Overview

Ordinary rectifier bridge, 1000V, 0.8A, 30A, 0.95V, 0.4A, 10uA

TB10S Parametric

Parameter NameAttribute value
PackageTBS
Maximum recurrent peak reverse voltage1000
Maximum average forward rectified current0.4
Peak forward surge current30
Maximum instantaneous forward voltage0.95
Maximum reverse current10
TJ(℃)-55~+150

TB10S Preview

TB2S-TB10S
SILICON BRIDGE RECTIFIERS
A
Glass passivated chip junction
High surge overload rating: 30A peak
Saves space on printed circuit boards
This series is UL recognized under Component Index, file number E239431
Plastic material has U/L flammability classification94V-O
High temperature soldering guaranteed: 260°C/10 seconds at 5 lbs. (2.3kg) tension
Dim
A
B
C
D
E
F
G
H
I
K
C
~
K
~
D
H
B
FEATURES
-
+
I
F
G
E
TBS
Min
4.80
4.30
1.20
6.15
0.15
0.30
0.20MAX
1.35
0.60
3.80
All Dimensions in mm
1.65
0.80
4.20
Max
5.20
4.60
1.50
6.65
0.35
0.90
MECHANICAL DATA
Case: Molded plastic body over passivated junctions
Terminals: Plated leads solderable per MIL-STD-750, Method 2026
Maximum Ratings
(@TA = 25°C unless otherwise specified)
Characteristic
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
DC Blocking Voltage
Maximum average forward Output current T
L
100°C
=
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
Current squared time t < 8.3ms , Ta = 25℃
It
2
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
TB2S
200
140
200
TB4S
400
280
400
TB6S
600
420
600
0.8
1)
2)
TB8S
800
560
800
TB10S
1000
700
1000
UNITS
V
V
V
A
1.0
I
FSM
30
A
3.74
As
2
Thermal Characteristics
Characteristic
Typical thermal resistance junction to lead
On aluminum substrate
Operating junction temperature range
Storage temperature range
Symbol
R
ΘJL
R
θ JA
T
J
T
STG
TB2S
TB4S
TB6S
25
80
- 55 ---- + 150
- 55 ---- + 150
TB8S
TB10S
UNITS
℃/W
Electrical Characteristics
(@TA = 25°C unless otherwise specified)
Characteristic
Maximum instantaneous forward voltage at 0.4 A
Maximum reverse current @T
A
=25
at rated DC blocking voltage
Symbol
V
F
I
R
TB2S
TB4S
TB6S
0.95
10
TB8S
TB10S
UNITS
V
μA
Revision:20170701-P1
ht
t
p
:
//
www.lgesemi
.c
o
m
mail:lge@lgesemi.com
TB2S-TB10S
SILICON BRIDGE RECTIFIERS
FIG.1 TYPICAL FORWARD CHARACTERISTICS
Instantaneous Forward Current, (A)
10
FIG.2 FORWARD DERATING CURVE
1.0
Average Forward Rectified
Current, (A)
0.75
1
0.5
0.25
RESISTIVE OR INDUCTIVE LOAD
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
0
25
50
75
100
125
150
Instantaneous Forward Voltage, ( V )
Ambient Temperature, (°C )
FIG.3 TYPICAL REVERSE CHARACTERISTICS
100
FIG.4 PEAK FORWARD SURGE CURRENT
35
Instantaneous Reverse Leakage
Current, (μA
)
10
Peak
F
orward
Surge Current,
(A)
T
J
=100°C
30
25
20
15
10
5
0
1
T
J
=75°C
0.1
T
J
=25°C
0.01
0
20
40
60
80
100
120
140
1
10
100
Number Of Cycles At 60Hz
Percent Of Rated Peak Reverse Voltage, %
Device
TB2S-TB10S
Package
TBS
Shipping
4000/Tape&Reel
Revision:20170701-P1
ht
t
p
:
//
www.lgesemi
.c
o
m
mail:lge@lgesemi.com

TB10S Related Products

TB10S TB4S TB8S TB2S TB6S
Description Ordinary rectifier bridge, 1000V, 0.8A, 30A, 0.95V, 0.4A, 10uA Ordinary rectifier bridge, 400V, 0.8A, 30A, 0.95V, 0.4A, 10uA Ordinary rectifier bridge, 800V, 0.8A, 30A, 0.95V, 0.4A, 10uA Ordinary rectifier bridge, 200V, 0.8A, 30A, 0.95V, 0.4A, 10uA Ordinary rectifier bridge, 600V, 0.8A, 30A, 0.95V, 0.4A, 10uA
Package TBS TBS TBS TBS TBS
Maximum recurrent peak reverse voltage 1000 400 800 200 600
Maximum average forward rectified current 0.4 0.4 0.4 0.4 0.4
Peak forward surge current 30 30 30 30 30
Maximum instantaneous forward voltage 0.95 0.95 0.95 0.95 0.95
Maximum reverse current 10 10 10 10 10
TJ(℃) -55~+150 -55~+150 -55~+150 -55~+150 -55~+150
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