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W3743ZC500

Description
Rectifier Diode, 1 Phase, 1 Element, 3750A, 5000V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size359KB,9 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
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W3743ZC500 Overview

Rectifier Diode, 1 Phase, 1 Element, 3750A, 5000V V(RRM), Silicon,

W3743ZC500 Parametric

Parameter NameAttribute value
MakerLittelfuse
Reach Compliance Codecompliant
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2.9 V
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current39000 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature160 °C
Minimum operating temperature-55 °C
Maximum output current3750 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum repetitive peak reverse voltage5000 V
Maximum reverse current200000 µA
Maximum reverse recovery time55 µs
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Date:- 7
th
January, 2014
Data Sheet Issue:- 1
Rectifier Diode
Types W3743Z#400 to W3743Z#500
Absolute Maximum Ratings
VOLTAGE RATINGS
V
RRM
V
RSM
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
4000-5000
4100-5100
UNITS
V
V
OTHER RATINGS
I
F(AV)M
I
F(AV)M
I
F(AV)M
I
F(RMS)M
I
F(d.c.)
I
FSM
I
FSM2
I
2
t
I
2
t
T
j op
T
stg
Maximum average forward current, T
sink
=55°C, (note 2)
Maximum average forward current. T
sink
=100°C, (note 2)
Maximum average forward current. T
sink
=100°C, (note 3)
Nominal RMS forward current, T
sink
=25°C, (note 2)
D.C. forward current, T
sink
=25°C, (note 4)
Peak non-repetitive surge t
p
=10ms, V
rm
=60%V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
rm
≤10V,
(note 5)
I
2
t capacity for fusing t
p
=10ms, V
rm
=60%V
RRM
, (note 5)
I
2
t capacity for fusing t
p
=10ms, V
rm
≤10V,
(note 5)
Operating temperature range
Storage temperature range
MAXIMUM
LIMITS
3750
2625
1640
6860
6100
35
39
6.13 x 10
6
7.61 x 10
6
UNITS
A
A
A
A
A
kA
kA
A
2
s
A
2
s
°C
°C
-55 to +160
-55 to +160
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 160°C T
j
initial.
Data Sheet. Types W3743Z#400 to W3743Z#500 Issue 1
Page 1 of 9
January, 2014

W3743ZC500 Related Products

W3743ZC500 W3743ZD400 W3743ZD500
Description Rectifier Diode, 1 Phase, 1 Element, 3750A, 5000V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 3750A, 4000V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 3750A, 5000V V(RRM), Silicon,
Maker Littelfuse Littelfuse Littelfuse
Reach Compliance Code compliant compliant compliant
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 2.9 V 2.9 V 2.9 V
JESD-30 code O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
Maximum non-repetitive peak forward current 39000 A 39000 A 39000 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 160 °C 160 °C 160 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Maximum output current 3750 A 3750 A 3750 A
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 5000 V 4000 V 5000 V
Maximum reverse current 200000 µA 200000 µA 200000 µA
Maximum reverse recovery time 55 µs 55 µs 55 µs
surface mount YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD
Terminal location END END END
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