Preliminary Product Brief
September 2003
AGR19K180E
180 W, 1.840 GHz—1.870 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR19K180E is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor (LDMOS)
RF power transistor suitable for Korean PCS
(IS-95B N-CDMA [narrowband-code division multiple
access] pilot) (1.840 GHz—1.870 GHz) single and
multicarrier class AB power amplifier applications. This
device is manufactured using advanced LDMOS tech-
nology offering state-of-the-art performance and reli-
ability.
Table 1. Thermal Characteristics
Parameter
Thermal Resistance, Junction
to Case:
AGR19K180EU
AGR19K180EF
Sym Value
Unit
R
θJC
R
θJC
0.35
0.35
°C/W
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Drain Current Continuous
Total Dissipation at T
C
= 25 °C:
AGR19K180EU
AGR19K180EF
Derate Above 25
°C:
AGR19K180EU
AGR19K180EF
Operating Junction Tempera-
ture
Storage Temperature Range
Sym
V
DSS
V
GS
I
D
P
D
P
D
—
—
T
J
T
STG
Value
65
–0.5, 15
8.5
230
TBD
1.31
TBD
200
–65, 150
Unit
Vdc
Vdc
Adc
W
W
W/°C
W/°C
°C
°C
375D–03, STYLE 1
AGR19K180EU
AGR19K180EF
Figure 1. Available Packages
Features
I
I
I
I
I
I
I
I
Typical performance ratings for nine carrier Korean
PCS systems with nine Walsh codes per carrier,
27 V, 1.25 MHz carrier bandwidth (BW), adjacent
channel ±750 kHz, alternate channel ±1.98 MHz.
Typical P/A ratio of 11 dB:
— Output power: 21.4 W.
— Power gain: 12 dB min.
— Efficiency: TBD.
— ACPR at 27 V: –46 dBc.
— Spurious emissions: ±1.98 MHz: –40 dBc.
— Return loss: –12 dB.
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1.855 GHz, 180 W output
power pulsed 4 µs at 10% duty.
Large signal impedance parameters available.
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR19K180E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs both a human-body model (HBM) and a charged-device
model (CDM) qualification requirement in order to determine
ESD-susceptibility limits and protection design evaluation. ESD
voltage thresholds are dependent on the circuit parameters used
in each of the models, as defined by JEDEC's JESD22-A114
(HBM) and JESD22-C101 (CDM) standards.
Caution:
MOS devices are susceptible to damage from electro-
static charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
AGR19K180E
Preliminary Product Brief
180 W, 1.840 GHz—1.870 MHz, N-Channel E-Mode, Lateral MOSFET
September 2003
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
AGR19K180EU
PINS:
1A. DRAIN
1B. DRAIN
2A. GATE
2B. GATE
3. SOURCE
1A
AGERE
AGR19K180U
YYWWLL XXXXX
ZZZZZZZ
1B
3
2A
2B
AGR19K180EF
PINS:
1A. DRAIN
1B. DRAIN
2A. GATE
2B. GATE
3. SOURCE
1A
1B
3
AGERE
AGR19K180U
YYWWLL XXXXX
ZZZZZZZ
2A
2B
Label Notes:
I
M before the part number denotes model program. X before the part number denotes engineering prototype.
I
I
I
YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; BK = Bangkok,
Thailand). XXXXX = five-digit wafer lot number.
ZZZZZZZ = seven-digit assembly lot number on production parts.
ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.
2
Agere Systems Inc.
AGR19K180E
Preliminary Product Brief
180 W, 1.840 GHz—1.870 MHz, N-Channel E-Mode, Lateral MOSFET
September 2003
Ordering Information
Device Code
AGR19K180E
Package
AGR19K180EU (surface-mount)
AGR19K180EF (flanged)
Availability
Tape and Reel
Tray
Comcode
—
—
Fair-Rite
is a registered trademark of Fair-Rite Products Corporation.
ATC
is a registered trademark of American Technical Ceramics Corp.
Kemet
is a registered trademark of KRC Trade Corporation.
Sprague
is a registered trademark of Sprague Electric Company Corporation.
Vitramon
is a registered trademark Vitramon Incorporated.
Taconic
is a registered trademark of Tonoga Limited DBA Taconic Plastics Ltd.
For additional information, contact your Agere Systems Account Manager or the following:
INTERNET:
http://www.agere.com
E-MAIL:
docmaster@agere.com
N. AMERICA: Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway NE, Allentown, PA 18109-9138
1-800-372-2447,
FAX 610-712-4106 (In CANADA:
1-800-553-2448,
FAX 610-712-4106)
ASIA:
Agere Systems Hong Kong Ltd., Suites 3201 & 3210-12, 32/F, Tower 2, The Gateway, Harbour City, Kowloon
Tel. (852) 3129-2000,
FAX (852) 3129-2020
CHINA:
(86) 21-5047-1212
(Shanghai),
(86) 755-25881122
(Shenzhen)
JAPAN:
(81) 3-5421-1600
(Tokyo), KOREA:
(82) 2-767-1850
(Seoul), SINGAPORE:
(65) 6778-8833,
TAIWAN:
(886) 2-2725-5858
(Taipei)
EUROPE:
Tel. (44) 1344 296 400
Agere Systems Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application.
Agere is a registered trademark of Agere Systems Inc. Agere Systems and the Agere logo are trademarks of Agere Systems Inc.
Copyright © 2003 Agere Systems Inc.
All Rights Reserved
September 2003
PB03-199RFPP
京公网安备 11010802033920号
EEWORLD
