TrenchStop Series
®
IKP06N60T
p
Low Loss DuoPack : IGBT in TrenchStop
®
and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
•
•
•
•
•
•
•
•
•
•
Very low V
CE(sat)
1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5µs
Designed for :
- Variable Speed Drive for washing machines, air
conditioners and induction cooking
- Uninterrupted Power Supply
®
TrenchStop and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
Low EMI
Very soft, fast recovery anti-parallel EmCon HE diode
1
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
V
CE
600V
I
C;Tc=100°C
V
CE(sat),Tj=25°C
6A
1.5V
T
j,max
175°C
Marking
K06T60
Package
G
E
PG-TO-220-3-1
Type
IKP06N60T
PG-TO-220-3-1
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by
T
jmax
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
175°C
Diode forward current, limited by
T
jmax
T
C
= 25°C
T
C
= 100°C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
Power dissipation
T
C
= 25°C
Operating junction temperature
Storage temperature
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
1
2)
2)
Symbol
V
CE
I
C
Value
600
12
6
18
18
Unit
V
A
I
Cpul s
-
I
F
12
6
18
±20
5
88
-40...+175
-55...+175
260
V
µs
W
°C
I
Fpul s
V
GE
t
SC
P
tot
T
j
T
stg
V
GE
= 15V,
V
CC
≤
400V,
T
j
≤
150°C
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3 Sep. 07
Power Semiconductors
TrenchStop Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
R
thJC
R
thJCD
R
thJA
Symbol
Conditions
®
IKP06N60T
p
Max. Value
1.7
2.6
62
Unit
K/W
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V ,
I
C
= 0. 25m A
V
CE(sat)
V
G E
= 15 V ,
I
C
= 6 A
T
j
=2 5
°C
T
j
=1 7 5° C
Diode forward voltage
V
F
V
G E
= 0V ,
I
F
= 6 A
T
j
=2 5
°C
T
j
=1 7 5° C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 0. 18m A ,
V
CE
=
V
GE
V
C E
= 60 0 V
,
V
G E
= 0V
T
j
=2 5
°C
T
j
=1 7 5° C
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
C
iss
C
oss
C
rss
Q
Gate
V
C E
= 25 V ,
V
G E
= 0V ,
f=
1 MH z
V
C C
= 48 0 V,
I
C
=6 A
V
G E
= 15 V
-
-
-
-
-
V
G E
= 15 V ,t
S C
≤
5
µs
V
C C
= 4 0 0 V,
T
j
= 25
°
C
-
368
28
11
42
7
55
-
-
-
-
-
-
nC
nH
A
pF
I
GES
g
fs
R
Gint
V
C E
= 0V ,
V
G E
=2 0 V
V
C E
= 20 V ,
I
C
= 6 A
-
-
-
-
-
-
-
3.6
none
40
700
100
-
nA
S
Ω
µA
-
-
4.1
1.6
1.6
4.6
2.05
-
5.7
-
-
1.5
1.8
2.05
600
-
-
V
Symbol
Conditions
Value
min.
typ.
max.
Unit
L
E
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
I
C(SC)
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.3 Sep. 07
Power Semiconductors
TrenchStop Series
®
IKP06N60T
p
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rrm
d i
r r
/d t
T
j
=2 5
°C
,
V
R
= 4 00 V ,
I
F
= 6 A,
d i
F
/ d t
=5 5 0 A/
µs
-
-
-
-
123
190
5.3
450
-
-
-
-
ns
nC
A
A/µs
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=2 5
°C
,
V
C C
= 40 0 V,
I
C
= 6 A,
V
G E
= 0/ 15 V ,
R
G
= 23
Ω,
2)
L
σ
=6 0 nH ,
2)
C
σ
= 4 0p F
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
9
6
130
58
0.09
0.11
0.2
-
-
-
-
-
-
-
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
Switching Characteristic, Inductive Load,
at
T
j
=175
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rrm
d i
r r
/d t
T
j
=1 7 5° C
V
R
= 4 00 V ,
I
F
= 6 A,
d i
F
/ d t
=5 5 0 A/
µs
-
-
-
-
180
500
7.6
285
-
-
-
-
ns
nC
A
A/µs
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=1 7 5° C,
V
C C
= 40 0 V,
I
C
= 6 A,
V
G E
= 0/ 15 V ,
R
G
= 2 3Ω
1)
L
σ
=6 0 nH ,
1)
C
σ
= 4 0p F
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
9
8
165
84
0.14
0.18
0.335
-
-
-
-
-
-
-
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
2)
1)
Leakage inductance
L
σ
a nd Stray capacity
C
σ
due to dynamic test circuit in Figure E.
Leakage inductance
L
σ
a nd Stray capacity
C
σ
due to dynamic test circuit in Figure E.
3
Rev. 2.3 Sep. 07
Power Semiconductors
TrenchStop Series
®
IKP06N60T
p
t
p
=1µs
5µs
10µs
18A
15A
T
C
=80°C
12A
9A
6A
3A
0A
100Hz
T
C
=110°C
10A
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
1A
50µs
I
c
I
c
1kHz
10kH z
100kHz
500µs
5ms
DC
0,1A
1V
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
≤
175°C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 23Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤175°C;V
GE
=15V)
80W
15A
60W
I
C
,
COLLECTOR CURRENT
P
tot
,
POWER DISSIPATION
10A
40W
5A
20W
0W
25°C
50°C
75°C
100°C 125°C 150°C
0A
25°C
75°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(T
j
≤
175°C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
≥
15V,
T
j
≤
175°C)
Power Semiconductors
4
Rev. 2.3 Sep. 07
TrenchStop Series
®
IKP06N60T
p
15A
V
G E
=20V
12A
15V
13V
9A
11V
9V
6A
7V
15A
V
G E
=20V
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
12A
15V
13V
9A
11V
9V
6A
7V
3A
3A
0A
0V
1V
2V
3V
0A
0V
1V
2V
3V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristic
(T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristic
(T
j
= 175°C)
V
CE(sat),
COLLECTOR
-
EMITT SATURATION VOLTAGE
I
C
=12A
2,5V
1 5A
I
C
,
COLLECTOR CURRENT
1 2A
2,0V
I
C
=6A
9A
1,5V
6A
T
J
=1 75 °C
25 °C
0A
1,0V
I
C
=3A
3A
0,5V
0V
2V
4V
6V
8V
1 0V
0,0V
-50°C
0°C
50°C
100°C
V
GE
,
GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(V
CE
=20V)
T
J
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(V
GE
= 15V)
Power Semiconductors
5
Rev. 2.3 Sep. 07
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