DISCRETE SEMICONDUCTORS
DATA SHEET
BLS2731-50
Microwave power transistor
Product specification
Supersedes data of 1997 Nov 05
1998 Jan 30
Philips Semiconductors
Product specification
Microwave power transistor
FEATURES
•
Suitable for short and medium pulse applications
•
Internal input and output matching networks for an easy
circuit design
•
Emitter ballasting resistors improve ruggedness
•
Gold metallization ensures excellent reliability
•
Interdigitated emitter-base structure provides high
emitter efficiency
•
Multicell geometry improves power sharing and reduces
thermal resistance.
handbook, halfpage
BLS2731-50
PINNING - SOT422A
PIN
1
2
3
collector
emitter
base; connected to flange
DESCRIPTION
1
APPLICATIONS
•
Common base class-C pulsed power amplifiers for radar
applications in the 2.7 to 3.1 GHz band.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT422A) with the common base connected to the
flange.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a common base class-C test circuit.
MODE OF OPERATION
Pulsed, class-C
f
(GHz)
2.7 to 3.1
V
CB
(V)
40
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
P
L
(W)
60
G
p
(dB)
typ. 9
η
C
(%)
typ. 40
3
2
3
MBK051
Fig.1 Simplified outline.
1998 Jan 30
2
Philips Semiconductors
Product specification
Microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CES
V
EBO
I
CM
P
tot
T
stg
T
j
T
sld
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
peak collector current
total power dissipation
storage temperature
operating junction temperature
soldering temperature
up to 0.2 mm from ceramic cap;
t
≤
10 s
R
BE
= 0
open collector
t
p
≤
100
µs; δ ≤
10%
t
p
= 100
µs; δ
= 10%; T
mb
= 25
°C
CONDITIONS
open emitter
−
−
−
−
−
−65
−
−
BLS2731-50
MIN.
MAX.
75
75
2
6
80
+200
200
235
UNIT
V
V
V
A
W
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
Z
th j-h
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CES
I
CBO
I
CES
I
EBO
h
FE
C
c
PARAMETER
collector-base breakdown voltage
collector leakage current
collector leakage current
emitter leakage current
DC current gain
collector capacitance (die only)
CONDITIONS
I
C
= 15 mA; open emitter
V
CB
= 40 V; I
E
= 0
V
CE
= 40 V; V
BE
= 0
V
EB
= 1.5 V; I
C
= 0
V
CB
= 5 V; I
C
= 1.5 A
V
CE
= 1 V; I
E
= i
e
= 0;
f = 1 MHz
MIN.
75
75
−
−
−
40
−
−
−
−
−
−
−
30
TYP.
MAX.
−
−
1.5
3
0.3
−
−
pF
UNIT
V
V
mA
mA
mA
PARAMETER
thermal impedance from junction to heatsink
CONDITIONS
t
p
= 100
µs; δ
= 10%; note 1
VALUE
0.3
UNIT
K/W
collector-emitter breakdown voltage I
C
= 15 mA; V
BE
= 0
APPLICATION INFORMATION
RF performance at T
h
= 25
°C
in a common-base test circuit.
MODE OF OPERATION
Class-C; t
p
= 100
µs; δ
= 10%
f
(GHz)
2.7 to 3.1
V
CE
(V)
40
P
L
(W)
≥50
typ. 60
G
p
(dB)
≥8
typ. 9
η
C
(%)
≥35
typ. 40
1998 Jan 30
3
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-50
MGM533
handbook, halfpage
60
(2)
(1)
(3)
handbook, halfpage
12
MGM534
PL
(W)
40
Gp
(dB)
8
20
4
0
0
2
4
6
8
PD (W)
V
CB
= 40 V; class-C; t
p
= 100
µs; δ
= 10%.
(1) f = 3.1 GHz.
(2) f = 2.7 GHz.
(3) f = 2.9 GHz.
10
0
2.6
2.8
3
f (GHz)
3.2
V
CB
= 40 V; class-C; P
L
= 50 W; t
p
= 100
µs; δ
= 10%.
Fig.2
Load power as a function of drive power;
typical values.
Fig.3
Power gain as function of frequency;
typical values.
handbook, halfpage
16
MGM535
handbook, halfpage
Zi
(Ω)
12
xi
12
ZL
MGM536
(Ω)
8
4
8
ri
0
4
RL
−4
XL
0
2.6
2.8
3
f (GHz)
3.2
−8
2.6
2.8
3
f (GHz)
3.2
V
CB
= 40 V; class-C; P
L
= 50 W.
V
CB
= 40 V; class-C; P
L
= 50 W.
Fig.4
Input impedance as function of frequency
(series components); typical values.
Fig.5
Load impedance as function of frequency
(series components); typical values.
1998 Jan 30
4
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-50
handbook, full pagewidth
30
30
40
C1
C2
C3
input
output
C4
MGM537
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (ε
r
= 2.2), thickness 0.38 mm.
The other side is unetched and serves as a ground plane.
C1 = ATC 200A 10 nF
C2 = ATC 100A 10 pF
C3 = ATC 700A 150 pF
C4 = Tekelec trimmer 37281SL 0.4 to 2.5 pF.
Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit.
1998 Jan 30
5
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