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2SC6134(TE85L)

Description
TRANSISTOR,BJT,NPN,30V V(BR)CEO,3A I(C),SC-70VAR
CategoryDiscrete semiconductor    The transistor   
File Size157KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SC6134(TE85L) Overview

TRANSISTOR,BJT,NPN,30V V(BR)CEO,3A I(C),SC-70VAR

2SC6134(TE85L) Parametric

Parameter NameAttribute value
package instructionUFM, 2-2U1A, 3 PIN
Reach Compliance Codeunknow
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)250
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.8 W
surface mountYES
Base Number Matches1
2CS6134
TOSHIBA Transistor
Silicon NPN Epitaxial Type
2SC6134
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
High DC current gain: h
FE
= 250 to 400 (I
C
= 0.3A)
Low collector-emitter saturation voltage: V
CE (sat)
= 0.14 V (max)
High-speed switching: t
f
= 25 ns (typ.)
0.65±0.05
1
2
3
0.166±0.05
Unit: mm
2.1±0.1
1.7±0.1
+0.1
0.3 -0.05
Characteristics
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
DC
Pulse
Symbol
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CP
I
B
P
C (Note1)
P
C (Note2)
Rating
50
50
30
6
3.0
5.0
0.3
800
500
150
−55
to 150
Unit
V
V
V
V
A
A
mW
°C
°C
UFM
JEDEC
JEITA
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Junction temperature
Storage temperature range
T
j
T
stg
Note1:
Note2:
Mounted on ceramic board. (25.4 mm
×
25.4 mm
×
0.8 mm, Cu Pad: 645 mm
2
)
Mounted on FR4 board. (25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm
2
)
Note3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
0.7±0.05
Absolute Maximum Ratings
(Ta
=
25°C)
2.0±0.1
1 :Gate
2 :Source
3 :Drain
2007-08
1
2014-03-01
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