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1N3768E3

Description
Rectifier Diode, 1 Phase, 1 Element, 35A, 1000V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN
CategoryDiscrete semiconductor    diode   
File Size477KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

1N3768E3 Overview

Rectifier Diode, 1 Phase, 1 Element, 35A, 1000V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN

1N3768E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
package instructionDO-5, 1 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationPOWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.4 V
JEDEC-95 codeDO-203AB
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current500 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current35 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current10 µA
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
1N1184, 1N1186, 1N1188, 1N1190,
1N3766 and 1N3768 (R)
Qualified Levels:
JAN, JANTX, and
JANTXV
Available on
commercial
versions
High Reliability Silicon Power Rectifier
Qualified per MIL-PRF-19500/297
DESCRIPTION
This series of silicon power rectifier part numbers are qualified up to the JANTXV level for high
reliability applications. They are constructed with glass passivated die and feature glass to
metal seal construction. They have a 500 amp surge rating and provide a V
RWM
up to 1000
volts.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
High continuous current rating.
Very low forward voltage.
Low thermal resistance.
JAN, JANTX and JANTXV qualifications are available per MIL-PRF-19500/297.
RoHS compliant devices available (commercial grade only).
DO-5
(DO-203AB)
Package
APPLICATIONS / BENEFITS
High frequency switching circuits.
Mechanically rugged DO-5 package.
MAXIMUM RATINGS
@ T
A
= +25
ºC
unless otherwise stated
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Case
Working Peak Reverse Voltage
Symbol
T
J
and T
STG
R
ӨJC
V
RWM
Value
-65 to +175
0.8
100
200
400
600
800
1000
35
500
Unit
o
C
o
C/W
V
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
1N1184(R)
1N1186(R)
1N1188(R)
1N1190(R)
1N3766(R)
1N3768(R)
o
(1)
Maximum Average DC Output Current @ T
C
= 150 C
Non-Repetitive Sinusoidal Surge Current @ 1/120 s,
T
C
= 150 ºC
I
O
I
FSM
A
A
NOTE:
1. Derate linearly 1.4 A ºC between T
C
= 150 ºC to T
C
= 175 ºC.
T4-LDS-0138, Rev. 2 (121993)
©2013 Microsemi Corporation
Page 1 of 6
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