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1N5820E3

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size1MB,8 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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1N5820E3 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2

1N5820E3 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionO-LALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.7 V
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage20 V
Maximum reverse current100 µA
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
1N5820 – 1N5822 and 1N6864
Qualified Levels*:
JAN, JANTX,
JANTXV and JANS
Available on
commercial
versions
3 Amp Axial Schottky Barrier Rectifiers
Qualified per MIL-PRF-19500/620
DESCRIPTION
This series of 3 amp Schottky rectifiers in their axial-leaded “B” packaging offer flexible thru-
hole mounting. The 1N5822 and 1N6864 are military qualified for high-reliability applications.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered 1N5820 – 1N5822 and 1N6864 numbers.
Hermetically sealed.
Metallurgically bonded.
Double plug construction.
*JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/620 for 1N6822
and 1N6864 only.
(See
Part Nomenclature
for all available options.)
RoHS compliant devices available (commercial grade only).
“B” Package
Also available in:
“B” MELF Package
(surface mount)
1N5820US – 1N5822US,
1N6864US
APPLICATIONS / BENEFITS
Flexible axial leads for thru-hole mounting (see package illustration).
Non-sensitive to ESD per MIL-STD-750 method 1020.
MAXIMUM RATINGS
@ T
A
= +25 C unless otherwise noted.
Parameters/Test Conditions
Junction Temperature
Storage Temperature
Thermal Resistance Junction-to-Lead @ .375 inch
(9.52 mm) lead length
o
Surge Peak Forward Current @ T
A
= +25 C
(Test pulse = 8.3 ms, half-sine wave.)
o
(1)
Average Rectified Output Current @ T
L
= +55 C
Symbol
T
J
T
STG
R
ӨJL
I
FSM
I
O
Value
-65 to +125
-65 to +150
30
80
3
Unit
C
C
o
C/W
o
o
o
A
A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
NOTES:
1. See
Figures 3 and 4
for derating curves and for effects of V
R
on T
J
.
The maximum T
J
depends on the
voltage applied.
T4-LDS-0303, Rev. 1 (6/14/13)
©2013 Microsemi Corporation
Page 1 of 8

1N5820E3 Related Products

1N5820E3 1N5822E3 1N6864E3 JANTX1N6864 JAN1N6864 JANTXV1N6864 1N5821E3 JANS1N6864
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package instruction O-LALF-W2 ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2 O-LALF-W2 HERMETIC SEALED, GLASS, B PACKAGE-2 O-LALF-W2 HERMETIC SEALED, GLASS, B PACKAGE-2 O-LALF-W2 HERMETIC SEALED, GLASS, B PACKAGE-2
Reach Compliance Code compliant compli compliant compliant compliant compliant compliant unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.7 V 0.7 V 0.7 V 0.7 V 0.7 V 0.7 V 0.7 V 0.7 V
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
Maximum non-repetitive peak forward current 80 A 80 A 80 A 80 A 80 A 80 A 80 A 80 A
Number of components 1 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Package body material GLASS GLASS GLASS GLASS GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 20 V 40 V 80 V 80 V 80 V 80 V 30 V 80 V
Maximum reverse current 100 µA 100 µA 150 µA 150 µA 150 µA 150 µA 100 µA 150 µA
surface mount NO NO NO NO NO NO NO NO
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Maker Microsemi - Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi
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