JAN1N6864 datasheet, PDF - EEWORLD Datasheet

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JAN1N6864: DescriptionRectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 80V V(RRM), Silicon, HERMETIC SEALED, GLASS, B PACKAGE-2; CategoryDiscrete semiconductor diode; File Size1MB，8 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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JAN1N6864 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 80V V(RRM), Silicon, HERMETIC SEALED, GLASS, B PACKAGE-2

JAN1N6864 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Microsemi
package instruction	O-LALF-W2
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.7 V
JESD-30 code	O-LALF-W2
Maximum non-repetitive peak forward current	80 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	125 °C
Minimum operating temperature	-65 °C
Maximum output current	3 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Qualified
Guideline	MIL-19500
Maximum repetitive peak reverse voltage	80 V
Maximum reverse current	150 µA
surface mount	NO
technology	SCHOTTKY
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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1N5820 – 1N5822 and 1N6864

Qualified Levels*:

JAN, JANTX,

JANTXV and JANS

Available on

commercial

versions

3 Amp Axial Schottky Barrier Rectifiers

Qualified per MIL-PRF-19500/620

DESCRIPTION

This series of 3 amp Schottky rectifiers in their axial-leaded “B” packaging offer flexible thru-

hole mounting. The 1N5822 and 1N6864 are military qualified for high-reliability applications.

Important:

For the latest information, visit our website

http://www.microsemi.com.

FEATURES

•

JEDEC registered 1N5820 – 1N5822 and 1N6864 numbers.

Hermetically sealed.

Metallurgically bonded.

Double plug construction.

*JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/620 for 1N6822

and 1N6864 only.

(See

Part Nomenclature

for all available options.)

RoHS compliant devices available (commercial grade only).

“B” Package

Also available in:

“B” MELF Package

(surface mount)

1N5820US – 1N5822US,

1N6864US

•

APPLICATIONS / BENEFITS

•

Flexible axial leads for thru-hole mounting (see package illustration).

Non-sensitive to ESD per MIL-STD-750 method 1020.

MAXIMUM RATINGS

@ T

= +25 C unless otherwise noted.

Parameters/Test Conditions

Junction Temperature

Storage Temperature

Thermal Resistance Junction-to-Lead @ .375 inch

(9.52 mm) lead length

Surge Peak Forward Current @ T

= +25 C

(Test pulse = 8.3 ms, half-sine wave.)

(1)

Average Rectified Output Current @ T

= +55 C

Symbol

STG

ӨJL

FSM

Value

-65 to +125

-65 to +150

Unit

C/W

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

1-800-446-1158

Tel: (978) 620-2600

Fax: (978) 689-0803

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Website:

www.microsemi.com

NOTES:

1. See

Figures 3 and 4

for derating curves and for effects of V

on T

The maximum T

depends on the

voltage applied.

T4-LDS-0303, Rev. 1 (6/14/13)

Page 1 of 8

JAN1N6864 Related Products

	JAN1N6864	1N5822E3	1N6864E3	JANTX1N6864	JANTXV1N6864	1N5820E3	1N5821E3	JANS1N6864
Description	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 80V V(RRM), Silicon, HERMETIC SEALED, GLASS, B PACKAGE-2	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 80V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 80V V(RRM), Silicon, HERMETIC SEALED, GLASS, B PACKAGE-2	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 80V V(RRM), Silicon, HERMETIC SEALED, GLASS, B PACKAGE-2	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 80V V(RRM), Silicon, HERMETIC SEALED, GLASS, B PACKAGE-2
package instruction	O-LALF-W2	ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2	O-LALF-W2	HERMETIC SEALED, GLASS, B PACKAGE-2	HERMETIC SEALED, GLASS, B PACKAGE-2	O-LALF-W2	O-LALF-W2	HERMETIC SEALED, GLASS, B PACKAGE-2
Reach Compliance Code	compliant	compli	compliant	compliant	compliant	compliant	compliant	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	0.7 V	0.7 V	0.7 V	0.7 V	0.7 V	0.7 V	0.7 V	0.7 V
JESD-30 code	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Maximum non-repetitive peak forward current	80 A	80 A	80 A	80 A	80 A	80 A	80 A	80 A
Number of components	1	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	3 A	3 A	3 A	3 A	3 A	3 A	3 A	3 A
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	80 V	40 V	80 V	80 V	80 V	20 V	30 V	80 V
Maximum reverse current	150 µA	100 µA	150 µA	150 µA	150 µA	100 µA	100 µA	150 µA
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
technology	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maker	Microsemi	-	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi
Base Number Matches	1	1	1	1	1	-	-	-

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