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934058125118

Description
934058125118
CategoryDiscrete semiconductor    The transistor   
File Size95KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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934058125118 Overview

934058125118

934058125118 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)185 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.0062 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)240 A
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
PHD110NQ03LT
N-channel TrenchMOS™ logic level FET
Rev. 01 — 16 June 2004
M3D300
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s
Logic level threshold
s
Low on-state resistance
s
Low gate charge
s
Surface mount package.
1.3 Applications
s
Control FET in DC-to-DC converters
s
Switched-mode power supplies.
1.4 Quick reference data
s
V
DS
25 V
s
P
tot
115 W
s
I
D
75 A
s
R
DSon
4.6 mΩ.
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT428 (D-PAK), simplified outline and symbol
Description
gate (g)
drain (d)
source (s)
mounting base;
connected to drain (d)
2
1
Top view
3
MBK091
Simplified outline
[1]
Symbol
d
mb
g
mbb076
s
SOT428 (D-PAK)
[1]
It is not possible to make a connection to pin 2 of the SOT428 package.

934058125118 Related Products

934058125118 PHD110NQ03LT118 PHD110NQ03LT
Description 934058125118 MOSFET TRENCH<=30 TRANSISTOR 75 A, 25 V, 0.0062 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DPAK-3, FET General Purpose Power
Configuration SINGLE WITH BUILT-IN DIODE Single SINGLE WITH BUILT-IN DIODE
Maker NXP - NXP
package instruction SMALL OUTLINE, R-PSSO-G2 - SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown - unknow
ECCN code EAR99 - EAR99
Avalanche Energy Efficiency Rating (Eas) 185 mJ - 185 mJ
Minimum drain-source breakdown voltage 25 V - 25 V
Maximum drain current (ID) 75 A - 75 A
Maximum drain-source on-resistance 0.0062 Ω - 0.0062 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 - R-PSSO-G2
Number of components 1 - 1
Number of terminals 2 - 2
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Polarity/channel type N-CHANNEL - N-CHANNEL
Maximum pulsed drain current (IDM) 240 A - 240 A
surface mount YES - YES
Terminal form GULL WING - GULL WING
Terminal location SINGLE - SINGLE
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
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