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BT169D,162

Description
SILICON CONTROLLED RECTIFIER,400V V(DRM),500MA I(T),TO-92VAR
CategoryAnalog mixed-signal IC    Trigger device   
File Size130KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BT169D,162 Overview

SILICON CONTROLLED RECTIFIER,400V V(DRM),500MA I(T),TO-92VAR

BT169D,162 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instruction,
Reach Compliance Codecompliant
Nominal circuit commutation break time100 µs
Critical rise rate of minimum off-state voltage500 V/us
Maximum DC gate trigger current0.2 mA
Maximum DC gate trigger voltage0.8 V
Maximum holding current5 mA
Maximum leakage current0.1 mA
On-state non-repetitive peak current9 A
Maximum on-state voltage1.7 V
Maximum on-state current500 A
Maximum operating temperature125 °C
Off-state repetitive peak voltage400 V
surface mountNO
Trigger device typeSCR
TO
-92
BT169 series
Thyristors logic level
Rev. 5 — 30 September 2011
Product data sheet
1. Product profile
1.1 General description
Passivated, sensitive gate thyristors in a SOT54 plastic package.
1.2 Features and benefits
Designed to be interfaced directly to microcontrollers, logic integrated circuits and
other low power gate trigger circuits.
1.3 Applications
General purpose switching and phase control applications.
1.4 Quick reference data
V
DRM
, V
RRM
200 V (BT169B)
V
DRM
, V
RRM
400 V (BT169D)
V
DRM
, V
RRM
600 V (BT169G)
I
T(RMS)
0.8 A
I
T(AV)
0.5 A
I
TSM
8 A
2. Pinning information
Table 1.
Pin
1
2
3
Discrete pinning
Description
anode (a)
gate (g)
cathode (k)
A
G
sym037
Simplified outline
Symbol
K
321
SOT54 (TO-92)
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