SO
T2
Z0107MN0
4Q Triac
Rev. 3 — 10 May 2011
Product data sheet
1. Product profile
1.1 General description
Planar passivated very sensitive gate four quadrant triac in a SOT223 (SC-73)
surface-mountable plastic package intended for applications requiring enhanced immunity
to noise and direct interfacing to logic level ICs and low power gate drivers.
23
1.2 Features and benefits
Direct interfacing to logic level ICs
Enhanced current surge capability
Enhanced noise immunity
High blocking voltage capability
Planar passivated for voltage
ruggedness and reliability
Surface-mountable package
Triggering in all four quadrants
Very sensitive gate
1.3 Applications
General purpose low power motor
control
Home appliances
Industrial process control
Low power AC Fan controllers
1.4 Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
Quick reference data
Parameter
repetitive peak
off-state voltage
non-repetitive peak
on-state current
RMS on-state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; see
Figure 4;
see
Figure 5
full sine wave; T
sp
≤
105 °C;
see
Figure 3;
see
Figure 1;
see
Figure 2
Conditions
Min
-
-
Typ
-
-
Max Unit
600
V
12.5 A
I
T(RMS)
-
-
1
A
NXP Semiconductors
Z0107MN0
4Q Triac
Quick reference data
…continued
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; see
Figure 9
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; see
Figure 9
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; see
Figure 9
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C; see
Figure 9
Min
0.3
0.3
0.3
0.3
Typ
-
-
-
-
Max Unit
5
5
5
7
mA
mA
mA
mA
Table 1.
Symbol
I
GT
Static characteristics
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning information
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
main terminal 2
1
2
3
4
T2
sym051
Simplified outline
Graphic symbol
T1
G
SOT223 (SOT223)
3. Ordering information
Table 3.
Ordering information
Package
Name
Z0107MN0
SOT223
Description
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
Type number
4. Marking
Table 4.
Z0107MN0
[1]
% = placeholder for manufacturing site code
Marking codes
Marking code
[1]
107MN0
Type number
Z0107MN0
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 10 May 2011
2 of 17
NXP Semiconductors
Z0107MN0
4Q Triac
5. Limiting values
Table 5.
Symbol
V
DRM
I
T(RMS)
I
TSM
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
I
2
t for fusing
rate of rise of on-state current
full sine wave; T
sp
≤
105 °C; see
Figure 3;
see
Figure 1;
see
Figure 2
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
see
Figure 4;
see
Figure 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
I
2
t
dI
T
/dt
t
p
= 10 ms; sine-wave pulse
I
T
= 1 A; I
G
= 20 mA; dI
G
/dt = 100 mA/µs;
T2+ G+
I
T
= 1 A; I
G
= 20 mA; dI
G
/dt = 100 mA/µs;
T2+ G-
I
T
= 1 A; I
G
= 20 mA; dI
G
/dt = 100 mA/µs;
T2- G-
I
T
= 1 A; I
G
= 20 mA; dI
G
/dt = 100 mA/µs;
T2- G+
I
GM
P
GM
P
G(AV)
T
stg
T
j
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
Max
600
1
12.5
13.8
0.78
50
50
50
20
1
2
0.1
150
125
Unit
V
A
A
A
A
2
s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
In accordance with the Absolute Maximum Rating System (IEC 60134).
8
I
T(RMS)
(A)
6
003aac269
1.2
I
T(RMS)
(A)
003a a c270
0.8
4
0.4
2
0
10
-2
10
-1
1
10
surge duration (s)
0
-50
0
50
100
150
T
s p
(°C)
Fig 1.
RMS on-state current as a function of surge
duration; maximum values
Fig 2.
RMS on-state current as a function of solder
point temperature; maximum values
Z0107MN0
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 10 May 2011
3 of 17
NXP Semiconductors
Z0107MN0
4Q Triac
2.0
P
tot
(W)
1.6
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
a = 180°
120°
90°
60°
30°
0.4
003aac259
Ω
1.2
0.8
0.0
0
0.2
0.4
0.6
0.8
1
I
T(RMS )
(A)
1.2
Fig 3.
16
I
TSM
(A)
12
Total power dissipation as a function of RMS on-state current; maximum values
003aaf449
8
I
T
4
1/f
T
j(init)
= 25
°C
max
0
1
10
10
2
number of cycles
10
3
I
TSM
t
Fig 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
Z0107MN0
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 10 May 2011
4 of 17
NXP Semiconductors
Z0107MN0
4Q Triac
10
3
I
TSM
(A)
I
T
003aaf490
I
TSM
t
t
p
T
j(init)
= 25
°C
max
10
2
(1)
(2)
10
1
10
−5
10
−4
10
−3
10
−2
10
−1
t
p
(s)
Fig 5.
Non-repetitive peak on-state current as a function of pulse width; maximum values
Z0107MN0
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 10 May 2011
5 of 17
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