Tentative
DSA4G01
Silicon PNP epitaxial planar type
For High-frequency Amplifier
Marking Symbol A4
Package Code : NS-B1-B-B
Absolute Maximum Ratings Ta = 25 °C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
DSA4G01
Total pages
page
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Rating
-30
-20
-5
-30
300
150
-55 to +150
Unit
V
V
V
mA
mW
°C
°C
Pin name
1.
Emitter
2.
Collector
3.
Base
Electrical Characteristics Ta = 25 °C±3 °C
Parameter
Symbol
Conditions
Min
Typ
Max
-0.1
-100
-10
220
-0.1
-0.7
300
1.0
2.8
22
Unit
μA
μA
μA
-
V
V
MHz
pF
dB
Ω
Collector-base cutoff current (Emitter open)
ICBO
VCB = -10 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = -20 V, IB = 0
Emitter-base cutoff current (Collector open)
IEBO
VEB = -5 V, IC = 0
*1
hFE
VCE = -10 V, IC = -1 mA
Forward current transfer ratio
Collector-emitter saturation voltage
VCE(sat) IC = -10 mA, IB = -1 mA
Base-emitter voltage
VBE
VCE = -10 V, IC = -1 mA
Transition frequency
fT
VCE = -10 V, IC = -1 mA
VCE = -10 V, IC = -1mA,
Small-signal revers transfer capacitance
Cre
f = 10.7 MHz
VCE = -10 V, IC = -1 mA, f = 5 MHz
NF
Noise figuer
VCE = -10 V, IC = -1 mA, f = 2 MHz
Feedback impedance
Zrb
70
150
methods for transistors.
*1 Rank classification
Code
Rank
hFE
Marking symbol
B
B
to 140
A4B
110
C
C
to 220
A4C
0
No-rank
70
to 220
A4
70
Product of no-rank is not classified and have no marking symbol for rank.
Packing
Radial type : 5 000 pcs / carton
2010.2.23
2010.8.17
Prepared
Revised
Semiconductor Company, Panasonic Corporation
NS-B1-B-B
Unit: mm
4.0
±0.2
2.0
±0.2
3.0
±0.2
15.6
±0.5
7.6
0.45
−0.10
+0.20
(0.8)
0.75 max.
(0.8)
(2.5)
(2.5)
0.45
−0.10
0.7
±0.1
+0.20
1
2
3
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Consult our sales staff in advance for information on the following applications:
–
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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