DSA4G01C datasheet, PDF - EEWORLD Datasheet

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DSA4G01C: DescriptionSmall Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1-B-B, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size401KB，3 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html; Environmental Compliance

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DSA4G01C Overview

Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1-B-B, 3 PIN

DSA4G01C Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Panasonic
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.03 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	110
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz

DSA4G01C Preview

Tentative

DSA4G01

Silicon PNP epitaxial planar type

For High-frequency Amplifier

Marking Symbol A4

Package Code : NS-B1-B-B

Absolute Maximum Ratings　Ta = 25 °C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Collector power dissipation

Junction temperature

Storage temperature

DSA4G01

Total pages

page

Symbol

VCBO

VCEO

VEBO

Tstg

Rating

-30

-20

-5

-30

300

150

-55 to +150

Unit

°C

Pin name

Emitter

Collector

Base

Electrical Characteristics　Ta = 25 °C±3 °C

Parameter

Symbol

Conditions

Min

Typ

Max

-0.1

-100

-10

220

-0.1

-0.7

300

1.0

2.8

Unit

μA

MHz

Collector-base cutoff current (Emitter open)

ICBO

VCB = -10 V, IE = 0

Collector-emitter cutoff current (Base open)

ICEO

VCE = -20 V, IB = 0

Emitter-base cutoff current (Collector open)

IEBO

VEB = -5 V, IC = 0

hFE

VCE = -10 V, IC = -1 mA

Forward current transfer ratio

Collector-emitter saturation voltage

VCE(sat) IC = -10 mA, IB = -1 mA

Base-emitter voltage

VBE

VCE = -10 V, IC = -1 mA

Transition frequency

VCE = -10 V, IC = -1 mA

VCE = -10 V, IC = -1mA,

Small-signal revers transfer capacitance

Cre

f = 10.7 MHz

VCE = -10 V, IC = -1 mA, f = 5 MHz

Noise figuer

VCE = -10 V, IC = -1 mA, f = 2 MHz

Feedback impedance

Zrb

150

methods for transistors.

*1 Rank classification

Code

Rank

hFE

Marking symbol

to 140

A4B

110

to 220

A4C

No-rank

to 220

Product of no-rank is not classified and have no marking symbol for rank.

Packing

Radial type : 5 000 pcs / carton

2010.2.23

2010.8.17

Prepared

Revised

Semiconductor Company, Panasonic Corporation

NS-B1-B-B

Unit: mm

4.0

±0.2

2.0

±0.2

3.0

±0.2

15.6

±0.5

7.6

0.45

−0.10

+0.20

(0.8)

0.75 max.

(0.8)

(2.5)

0.45

−0.10

0.7

±0.1

+0.20

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1)

If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any

other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any

other company which may arise as a result of the use of technical information described in this book.

(3) The products described in this book are intended to be used for general applications (such as office equipment, communications

equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.

Consult our sales staff in advance for information on the following applications:

–

Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,

life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of

the products may directly jeopardize life or harm the human body.

It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with

your using the products described in this book for any special application, unless our company agrees to your using the products in

this book for any special application.

(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.

20100202

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DSA4G01C Related Products

	DSA4G01C	DSA4G01B	DSA4G01
Description	Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1-B-B, 3 PIN	Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1-B-B, 3 PIN	Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1-B-B, 3 PIN
Is it Rohs certified?	conform to	conform to	conform to
Maker	Panasonic	Panasonic	Panasonic
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
Contacts	3	3	3
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.03 A	0.03 A	0.03 A
Collector-emitter maximum voltage	20 V	20 V	20 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	110	70	70
JESD-30 code	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE
Polarity/channel type	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.3 W	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	300 MHz	300 MHz	300 MHz

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