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2SJ305TE85L

Description
TRANSISTOR 200 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, FET General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size317KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SJ305TE85L Overview

TRANSISTOR 200 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, FET General Purpose Small Signal

2SJ305TE85L Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)0.2 A
Maximum drain-source on-resistance4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SJ305
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ305
High Speed Switching Applications
Analog Applications
High input impedance
Low gate threshold voltage.: V
th
=
−0.5~−1.5
V
Excellent switching times.: t
on
= 0.06
μs
(typ.)
t
off
= 0.15
μs
(typ.)
Low drain-source ON resistance: R
DS (ON)
= 2.4
(typ.)
Small package.
Complementary to 2SK2009
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V
DS
V
GSS
I
D
P
D
T
ch
T
stg
Rating
−30
±20
−200
200
150
−55~150
Unit
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-236MOD
SC-59
2-3F1F
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device.
Please handle with caution.
Marking
Equivalent Circuit
1
2007-11-01

2SJ305TE85L Related Products

2SJ305TE85L 2SJ305TE85R
Description TRANSISTOR 200 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, FET General Purpose Small Signal TRANSISTOR 200 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, FET General Purpose Small Signal
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR SINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (ID) 0.2 A 0.2 A
Maximum drain-source on-resistance 4 Ω 4 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-236 TO-236
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type P-CHANNEL P-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1

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