SILICON RECTIFIER
VOLTAGE RANGE 1300 to 1500 Volts CURRENT 3.0 Amperes
FEATURES
*
*
*
*
Low cost
Low leakage
Low forward voltage drop
High current capability
1N5413
THRU
1N5415
DO-201AD
MECHANICAL DATA
*
*
*
*
Case: Molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
.052 (1.3)
1.0 (25.4)
MIN.
.048 (1.2)
DIA.
.375 (9.5)
.335 (8.5)
.220 (5.6)
.197 (5.0)
DIA.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (@ T
A
=25
O
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
at T
A
= 75 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
I
2
T
R
JA
R
JL
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
C
J
T
J
, T
STG
1N5413
1300
910
1300
1N5414
1400
980
1400
3.0
150
93.4
20
0
1N5415
1500
1050
1500
UNITS
Volts
Volts
Volts
Amps
Amps
2
AS
Typical Current Squared Time
Typical Thermal Resistance (Note 2)
5.0
30
-55 to + 175
C/ W
pF
0
C
ELECTRICAL CHARACTERISTICS (@T
A
=25
O
C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
A
= 25 C
@T
A
= 1 5 0 C
o
o
SYMBOL
V
F
I
R
1N5413
1N5414
1.1
10
2.0
1N5415
UNITS
Volts
uAmps
mAmps
NOTES : 1. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
2. Typical Thermal Resistance : At 9.5mm lead lengths,PCB mounted.
2018-12
REV:A
RATINGANDCHARACTERISTICSCURVES(1N5413 THRU 1N5415 )
5.0
AVERAGE FORWARD CURRENT, (A)
INSTANTANEOUS REVERSE CURRENT, (uA)
10000
4.0
3.0
2.0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
1000
T
A
= 1 5 0
O
C
100
1.0
0
0
10
T
A
= 25
O
C
25
50
75
100
O
125
150
175
1.0
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
AMBIENT TEMPERATURE, ( C)
INSTANTANEOUS FORWARD CURRENT, (A)
PEAK FORWARD SURGE CURRENT, (A)
20
10
3.0
1.0
0.3
0.1
0.03
0.01
0
FIG.1 TYPICAL FORWARD CURRENT
DERATING CURVE
T
J
= 25
O
C
150
FIG.2 MAXIMUM REVERSE
CHARACTERISTICS
8.3ms Single Half Sine-Wave
(JEDED Method)
100
50
30
20
Pulse Width=300uS
1% Duty Cycle
0.5
1.0
1.5
2.0
2.5
3.0
3.5
10
1
5
10
50
100
INSTANTANEOUS FORWARD VOLTAGE, (V)
NUMBER OF CYCLES AT 60Hz
FIG.3 MAXIMUM INSTANTANEOUS FORWARD
CHARACTERISTICS
200
JUNCTION CAPACITANCE, (pF)
FIG.4 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
60
40
20
10
6
4
2
1
0.1
0.2
0.4
1.0
4.0
10 20
T
J
= 25
O
C
40
100
REVERSE VOLTAGE, (V)
FIG.5 TYPICAL JUNCTION CAPACITANCE
PACKAGING OF DIODE AND BRIDGE RECTIFIERS
BULK PACK
PACKAGE
DO-201
PACKING CODE
-B
EA PER BOX INNER BOX SIZE
(mm)
500
300*73*40
CARTON SIZE EA PER CARTON
(mm)
347*320*271
12,000
GROSS
WEIGHT(Kg)
15.9
REEL PACK
PACKAGE
DO-201
PACKING
EA PER EA PER COMPONENT TAPE SPACE REEL DIA CARTON SIZE EA PER
GROSS
SPACE
INNER
REEL
CARTON WEIGHT(Kg)
CODE
(mm)
(mm)
(mm)
(mm)
BOX
-T
1,200
1,200
5.0
52
330
355*350*335
4,800
9.10
AMMO PACK
PACKAGE
DO-201
PACKING
CODE
-F
REEL
( EA )
600
COMPONENT TAPE SPACE
SPACE(mm)
(mm)
9.5
52
BOX SIZE
(mm)
CARTON
SIZE(mm)
CARTON
( EA )
6,000
GROSS
WEIGHT (Kg)
9.9
255*73*100 400*268*225
Microchip MCU
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