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1N5414-T

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size352KB,6 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Environmental Compliance
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1N5414-T Overview

Rectifier Diode,

1N5414-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerRectron Semiconductor
Reach Compliance Codecompliant
Other featuresLOW LEAKAGE
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage1400 V
Maximum reverse current10 µA
Reverse test voltage1400 V
surface mountNO
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
SILICON RECTIFIER
VOLTAGE RANGE 1300 to 1500 Volts CURRENT 3.0 Amperes
FEATURES
*
*
*
*
Low cost
Low leakage
Low forward voltage drop
High current capability
1N5413
THRU
1N5415
DO-201AD
MECHANICAL DATA
*
*
*
*
Case: Molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
.052 (1.3)
1.0 (25.4)
MIN.
.048 (1.2)
DIA.
.375 (9.5)
.335 (8.5)
.220 (5.6)
.197 (5.0)
DIA.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (@ T
A
=25
O
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
at T
A
= 75 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
I
2
T
R
JA
R
JL
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
C
J
T
J
, T
STG
1N5413
1300
910
1300
1N5414
1400
980
1400
3.0
150
93.4
20
0
1N5415
1500
1050
1500
UNITS
Volts
Volts
Volts
Amps
Amps
2
AS
Typical Current Squared Time
Typical Thermal Resistance (Note 2)
5.0
30
-55 to + 175
C/ W
pF
0
C
ELECTRICAL CHARACTERISTICS (@T
A
=25
O
C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
A
= 25 C
@T
A
= 1 5 0 C
o
o
SYMBOL
V
F
I
R
1N5413
1N5414
1.1
10
2.0
1N5415
UNITS
Volts
uAmps
mAmps
NOTES : 1. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
2. Typical Thermal Resistance : At 9.5mm lead lengths,PCB mounted.
2018-12
REV:A

1N5414-T Related Products

1N5414-T 1N5413-B 1N5413-F 1N5413-T 1N5414-B 1N5414-F 1N5415-B 1N5415-F 1N5415-T
Description Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode,
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to conform to
Maker Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant
Other features LOW LEAKAGE LOW LEAKAGE LOW LEAKAGE LOW LEAKAGE LOW LEAKAGE CURRENT LOW LEAKAGE LOW LEAKAGE LOW LEAKAGE CURRENT LOW LEAKAGE
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
JEDEC-95 code DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
JESD-609 code e3 e3 e3 e3 e3 e3 e3 e3 e3
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A 150 A 150 A 150 A 150 A 150 A
Number of components 1 1 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 1400 V 1300 V 1300 V 1300 V 1400 V 1400 V 1500 V 1500 V 1500 V
Maximum reverse current 10 µA 10 µA 10 µA 10 µA 10 µA 10 µA 10 µA 10 µA 10 µA
Reverse test voltage 1400 V 1300 V 1300 V 1300 V 1400 V 1400 V 1500 V 1500 V 1500 V
surface mount NO NO NO NO NO NO NO NO NO
Terminal surface Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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