Preliminary
SemiWell
Semiconductor
TN815R
Symbol
3. Gate
○
○
Silicon Controlled Rectifiers
▼
1
2
3
Features
Repetitive Peak Off-State Voltage : 600V
◆
R.M.S On-State Current ( I
T(RMS)
= 8 A )
◆
Low On-State Voltage (1.4V(Typ.)@ I
TM
)
◆
Non-isolated Type
◆
○
2. Anode
1. Cathode
D-PAK
General Description
2
Standard gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
Absolute Maximum Ratings
Symbol
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
di/dt
P
GM
P
G(AV)
I
FGM
V
RGM
T
J
T
STG
( T
J
= 25°C unless otherwise specified )
Condition
Ratings
600
Half Sine Wave : T
C
= 109 °C
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
5
8
73
26.6
50
5
1
2
5.0
- 40 ~ 125
- 40 ~ 150
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I
2
t
for Fusing
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Units
V
A
A
A
A
2
s
A/
㎲
W
W
A
V
°C
°C
Apr, 2004. Rev.0
1/5
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
TN815R
Electrical Characteristics
Symbol
Items
V
AK
= V
DRM
T
C
= 25 °C
T
C
= 125 °C
I
TM
= 16 A
V
AK
= 6 V(DC), R
L
=10
Ω
I
GT
Gate Trigger Current (2)
T
C
= 25 °C
─
─
15
mA
tp=380
㎲
─
─
─
─
─
─
10
200
1.6
( T
C
= 25 °C unless otherwise noted )
Conditions
Ratings
Min.
Typ.
Max.
Unit
I
DRM
Repetitive Peak Off-State
Current
Peak On-State Voltage (1)
㎂
V
TM
V
V
D
= 6 V(DC), R
L
=10
Ω
V
GT
Gate Trigger Voltage (2)
T
C
= 25 °C
─
─
1.5
V
V
GD
dv/dt
Non-Trigger Gate Voltage (1)
Critical Rate of Rise Off-State
Voltage
V
AK
= 12 V, R
L
=100
Ω
T
C
= 125 °C
0.2
200
─
─
─
─
V
Linear slope up to V
D
= V
DRM
67%
,
Gate open
T
J
= 125°C
I
T
= 100mA, Gate Open
V/㎲
I
H
Holding Current
T
C
= 25 °C
─
─
20
mA
R
th(j-c)
R
th(j-a)
Thermal Impedance
Thermal Impedance
Junction to case
Junction to Ambient
─
─
─
─
2.0
70
°C/W
°C/W
※
Notes :
1. Pulse Width
=
1.0 ms , Duty cycle
≤
1%
2. R
GK
Current not Included in measurement.
2/5
TN815R
Fig 1. Gate Characteristics
Fig 2. Maximum Case Temperature
160
10
1
P
GM
(5W)
Max. Allowable Case Temperature [ C]
V
GM
(5V)
o
140
Gate Voltage [V]
120
θ
= 180
o
P
G(AV)
(1W)
I
GM
(2A)
10
0
100
25 C
o
π
80
2
π
θ
360°
60
V
GD
(0.2V)
10
-1
θ
: Conduction Angl e
40
0
1
2
3
4
5
6
10
-1
10
0
10
1
10
2
10
3
Gate Current [mA]
Average On-State Current [A]
Fig 3. Typical Forward Voltage
10
2
Fig 4. Thermal Response
10
Transient Thermal Impedance [ C/W]
On-State Current [A]
o
1
10
1
125 C
o
0.1
25 C
o
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.01
-4
10
10
-3
10
-2
10
-1
10
0
10
1
10
2
On-State Voltage [V]
Time (sec)
Fig 5. Typical Gate Trigger Voltage vs.
Junction Temperature
10
10
Fig 6. Typical Gate Trigger Current vs.
Junction Temperature
V
GT
(25
o
C)
I
GT
(25 C)
V
GT
(t C)
I
GT
(t C)
o
o
1
1
o
0.1
-50
0
50
100
o
150
0.1
-50
0
50
100
o
150
Junction Temperature[ C]
Junction Temperature[ C]
3/5
TN815R
Fig 7. Typical Holding Current
10
9
θ
= 180
o
Fig 8. Power Dissipation
Max. Average Power Dissipation [W]
8
θ
= 120
7
6
θ
= 60
5
θ
= 30
4
3
2
1
0
o
o
o
θ
= 90
o
I
H
(25
o
C)
I
H
(t C)
o
1
0.1
-50
0
50
100
o
150
0
1
2
3
4
5
6
Junction Temperature[ C]
Average On-State Current [A]
4/5
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