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TN3467A

Description
RF POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size149KB,6 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

TN3467A Overview

RF POWER TRANSISTOR

TN3467A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH SPEED SATURATED SWITCHING
Maximum collector current (IC)1.2 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-226
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)175 MHz
Maximum off time (toff)90 ns
Maximum opening time (tons)40 ns
Base Number Matches1
TN3467A / MMPQ3467
Discrete POWER & Signal
Technologies
TN3467A
MMPQ3467
E
B
E
B
E
B
E
B
C
TO-226
B
E
SOIC-16
C
C
C
C
C
C
C
C
PNP Switching Transistor
This device is designed for high speed saturated switching applications
at currents to 800 mA. Sourced from Process 70.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
40
40
5.0
1.2
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
TN3467A
1.0
8.0
50
125
Max
MMPQ3467
1.0
8.0
Units
W
mW/°C
°C/W
°C/W
°C/W
°C/W
125
240
©
1997 Fairchild Semiconductor Corporation

TN3467A Related Products

TN3467A MMPQ3467
Description RF POWER TRANSISTOR RF POWER TRANSISTOR
Is it Rohs certified? incompatible incompatible
Maker Fairchild Fairchild
package instruction CYLINDRICAL, O-PBCY-T3 SMALL OUTLINE, R-PDSO-G16
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Other features HIGH SPEED SATURATED SWITCHING HIGH SPEED SATURATED SWITCHING
Maximum collector current (IC) 1.2 A 1.2 A
Collector-emitter maximum voltage 40 V 40 V
Configuration SINGLE SEPARATE, 4 ELEMENTS
Minimum DC current gain (hFE) 40 40
JESD-30 code O-PBCY-T3 R-PDSO-G16
JESD-609 code e0 e0
Number of components 1 4
Number of terminals 3 16
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND RECTANGULAR
Package form CYLINDRICAL SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE GULL WING
Terminal location BOTTOM DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 175 MHz 175 MHz
Maximum off time (toff) 90 ns 90 ns
Maximum opening time (tons) 40 ns 40 ns
Base Number Matches 1 1
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