TN2130
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
DSS
/
BV
DGS
300V
R
DS(ON)
(max)
25Ω
V
GS(th)
(max)
2.4V
Order Number / Package
TO-236AB*
TN2130K1
Die
TN2130ND
Product marking for SOT-23:
N1T❋
where
❋
= 2-week alpha date code
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Features
❏
Free from secondary breakdown
❏
Low power drive requirement
❏
Ease of paralleling
❏
Low C
ISS
and fast switching speeds
❏
Excellent thermal stability
❏
Integral Source-Drain diode
❏
High input impedance and high gain
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications
❏
Logic level interfaces – ideal for TTL and CMOS
❏
Solid state relays
❏
Battery operated systems
❏
Photo voltaic drives
❏
Analog switches
❏
General purpose line drivers
❏
Telecom switches
Package Option
Drain
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
BV
DSS
BV
DGS
±
20V
-55°C to +150°C
300°C
Gate
Source
TO-236AB
(SOT-23)
top view
Note: See Package Outline section for dimensions.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
TN2130
Thermal Characteristics
Package
TO-236AB
I
D
(continuous)*
85mA
I
D
(pulsed)
200mA
Power Dissipation
@ T
A
= 25
°
C
0.36W
θ
jc
°
C/W
200
θ
ja
°
C/W
350
I
DR
*
85mA
I
DRM
200mA
*
I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Min
300
0.8
2.4
-5.5
100
10
100
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Typ
Max
Unit
V
V
mV/°C
nA
µA
µA
mA
Conditions
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 1mA
I
D
= 1mA, V
GS
= V
DS
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5V, I
D
= 120mA
V
GS
= 4.5V, I
D
= 120mA
V
DS
= 25V, I
D
= 100mA
V
GS
= 0V, V
DS
= 25V, f = 1MHz
ON-State Drain Current
Static Drain-to-Source ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
250
25
1.1
250
50
15
5
10
7
12
15
1.8
400
Ω
%/°C
m
pF
ns
V
ns
Switching Waveforms and Test Circuit
10V
90%
INPUT
0V
PULSE
GENERATOR
R
gen
10%
t
(ON)
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
V
DD
10%
10%
INPUT
OUTPUT
0V
90%
90%
2
Ω
V
DD
= 25V,
I
D
= 120mA
R
GEN
= 25Ω
I
SD
= 120mA, V
GS
= 0V
I
SD
= 120mA, V
GS
= 0V
V
DD
R
L
OUTPUT
D.U.T.
TN2130
Typical Performance Curves
Output Characteristics
1.0
0.5
V
GS
= 10V
0.8
V
GS
=10V
0.4
4V
6V
Saturation Characteristics
I
D
(amperes)
4V
0.4
I
D
(amperes)
0.6
8V
6V
0.3
3V
0.2
0.2
3V
0.1
2V
0
50
0
2
4
6
8
10
0
0
10
20
30
2V
40
V
DS
(volts)
Transconductance vs. Drain Current
1.0
1.0
V
DS
(volts)
Power Dissipation vs. Temperature
V
DS
0.8
0.8
V
DS
= 15V
T
A
= -55°C
25°C
G
FS
(siements)
P
D
(watts)
0.6
0.6
0.4
0.4
SOT-23
0.2
125°C
0.2
0
0
0.1
0.2
0.3
0.4
0.5
0
0
25
50
75
100
125
150
I
D
(amperes)
Maximum Rated Safe Operating Area
1.0
1.0
T
A
(°C)
Thermal Response Characteristics
SOT-23 (pulsed)
SOT-23 (DC)
Thermal Resistance (normalized)
0.8
I
D
(amperes)
0.1
0.6
0.4
SOT-23
T A = 25°C
P D = 0.36W
0.01
0.2
T
A
= 25°C
0.001
0
10
100
1000
0
0.001
0.01
0.1
1.0
10
V
DS
(volts)
t
p
(seconds)
3
TN2130
Typical Performance Curves
BV
DSS
Variation with Temperature
1.1
50
On-Resistance vs. Drain Current
40
V
GS
= 4.5V
BV
DSS
(normalized)
R
DS(ON)
(ohms)
30
V
GS
= 10V
1.0
20
10
0.9
-50
0
50
100
150
0
0
0.2
0.4
0.6
0.8
1.0
T
j
(°C)
Transfer Characteristics
1.0
I
D
(amperes)
V
TH
and R
DS
Variation with Temperature
2.0
1.2
V
=
= 15V
V
DS
DS
15V
0.8
V
GS(th)
(normalized)
1.1
1.2
1.0
0.8
0.9
0.6
T
A
= -55°C
0.4
125°C
0.2
0.8
0
0
2
4
6
8
10
-50
0
50
V
GS(th)
@ 1mA
0.4
0
100
150
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
50
10
T
j
(°C)
Gate Drive Dynamic Characteristics
f = 1MHz
8
C (picofarads)
V
DS
= 10V
V
GS
(volts)
C
ISS
25
6
80 pF
4
V
DS
= 40V
C
OSS
C
RSS
0
0
10
20
30
40
2
28pF
0
0
0.2
0.4
0.6
0.8
1.0
V
DS
(volts)
Q
G
(nanocoulombs)
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
R
DS(ON)
(normalized)
11/12/01
25°C
R
DS(ON)
@ 4.5V, 120mA
1.6
I
D
(amperes)
RF/Wirelessly
京公网安备 11010802033920号
EEWORLD
