TN0702
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
DSS
/
BV
DGS
20V
R
DS(ON)
(max)
1.3Ω
I
D(ON)
(min)
0.5A
V
GS(th)
(max)
1.0V
Order Number / Package
TO-92
TN0702N3
Features
❏
Low threshold — 1.0 volt max
❏
On resistance guaranteed at V
GS
= 2, 3, and 5 volts
❏
High input impedance
❏
Low input capacitance —130pF typical
❏
Fast switching speeds
❏
Low on resistance
❏
Free from secondary breakdown
❏
Low input and output leakage
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
❏
Logic level interfaces
❏
Solid state relays
❏
Battery operated systems
❏
Photo voltaic drives
❏
Analog switches
❏
General purpose line drivers
❏
Telecom switches
Package Option
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds maximum.
BV
DSS
BV
DGS
±
20V
-55°C to +150°C
300°C
SGD
TO-92
Note: See Package Outline section for dimensions.
03/11/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
TN0702
Thermal Characteristics
Package
TO-92
I
D
(continuous)*
0.53A
I
D
(pulsed)
1.0A
Power Dissipation
@ T
C
= 25
°
C
1W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
0.53A
I
DRM
1.0A
*
I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Min
20
0.5
0.8
1.0
-4.0
100
100
100
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
100
500
130
70
30
200
125
60
20
20
30
20
1.0
V
V
GS
= 0V, I
SD
= 0.5A
ns
V
DD
= 20V, I
D
= 0.5A,
R
GEN
= 25Ω
pF
V
GS
= 0V, V
DS
= 20V, f =1MHz
0.5
1.0
4.0
1.9
1.0
5.0
2.5
1.3
0.75
%/°C
m
Ω
Typ
Max
Unit
V
V
mV/°C
nA
nA
µA
A
Conditions
V
GS
= 0V, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
=
±20V,
V
DS
= 0V
V
DS
= 20V, V
GS
= 0V
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125°C
V
GS
= V
DS
= 5V
V
GS
= 2V, I
D
= 50mA
V
GS
= 3V, I
D
= 200mA
V
GS
= 5V, I
D
=500mA
V
GS
= 5V, I
D
= 500mA
V
DS
= 5V, I
D
= 500mA
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwide stated. (Pulse test: 300
µs
pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90%
INPUT
0V
PULSE
GENERATOR
R
gen
10%
t
(ON)
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
V
DD
10%
10%
INPUT
OUTPUT
0V
90%
90%
2
Ω
V
DD
R
L
OUTPUT
D.U.T.
TN0702
Typical Performance Curves
Output Characteristics
5
4
V
GS
= 8V
5
4
V
GS
= 6V
V
GS
= 5V
2
1
0
V
GS
= 4V
V
GS
= 3V
V
GS
= 2V
0
5
3
2
1
0
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
V
GS
= 3V
V
GS
= 2V
20
0
2
Saturation Characteristics
V
GS
= 8V
I
D
(amperes)
V
DS
(volts)
10
15
I
D
(amperes)
3
V
DS
(volts)
4
6
8
10
Transconductance vs. Drain Current
2.0
V
DS
= 5V
2.0
Power Dissipation vs. Case Temperature
G
FS
(siemens)
P
D
(watts)
1.0
TA = -55
°
C
TA = 25
°
C
TA = 125
°
C
1.0
TO-92
0
0
1
I
D
(amperes)
2
3
4
5
0
0
25
50
75
100
T
C
(
°
C)
125
150
Maximum Rated Safe Operating Area
10
1.0
Thermal Response Characteristics
Thermal Resistance (normalized)
0.8
0.6
0.4
0.2
0
0.001
I
D
(amperes)
1.0
TO-92 (pulsed)
TO-92 (DC)
0.1
TO-92
T C = 25
°
C
P D = 1W
0.01
TC = 25
°
C
0.1
1
V
DS
(volts)
10
100
0.01
t
p
(seconds)
0.1
1
10
3
TN0702
BV
DSS
Variation with Temperature
1.2
On-Resistance vs. Drain Current
BV
DSS
(normalized)
1.0
R
DS(ON)
(ohms)
V
GS
= 2V
V
GS
= 3V
V
GS
= 5V
0.8
-50
0
50
100
150
0
0.5
1.0
1.5
2.0
2.5
T
j
(°C)
Transfer Characteristics
5
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
1.6
1.4
V
DS
= 5V
4
R
DS(ON) @
5V, 500mA
1.4
V
GS(th)
(normalized)
1.2
V
(th)
@ 1mA
1.2
I
D
(amperes)
3
T
A
= 25°C
1.0
1.0
0.8
0.8
0.6
2
T
A
= 125°C
1
0
0
2
4
6
8
10
-50
0
50
100
0.6
150
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
200
10
T
j
(°C)
Gate Drive Dynamic Characteristics
f = 1MHz
8
150
V
DS
= 10V
C
ISS
C (picofarads)
V
GS
(volts)
200pF
6
100
C
OSS
50
4
V
DS
= 20V
C
RSS
2
146 pF
0
0
0
5
10
15
20
0
0.6
1.2
1.8
2.4
3.0
V
DS
(volts)
Q
G
(nanocoulombs)
02/06//02
©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
R
DS(ON)
(normalized)
T
A
= -55°C
Microchip MCU
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