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Datasheet> All Categories > Discrete semiconductor> The transistor> BC547B-C
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BC547B-C

Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size818KB，4 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric Compare View All

BC547B-C Overview

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3

BC547B-C Parametric

Parameter NameAttribute value
MakerSECOS
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz

BC547B-C Preview

BC546 / BC547 / BC548
Elektronische Bauelemente
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURE
Power Dissipation
G
H
CLASSIFICATION OF h
FE
Product-Rank
Product-Rank
Product-Rank
Range
BC546A
BC547A
BC548A
110~220
BC546B
BC547B
BC548B
200~450
BC546C
BC547C
K
J
A
B
D
1
Collector
2
Base
3
Emitter
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
BC548C
420~800
E
C
F
Collector
1
2
Base
3
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
BC546
BC547
BC548
BC546
BC547
BC548
Symbol
V
CBO
Ratings
80
50
30
65
45
30
6
100
625
150, -55~150
Unit
V
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Total Device Dissipation
Junction, Storage Temperature
V
CEO
V
EBO
I
C
P
D
T
J
, T
STG
V
V
mA
mW
°
C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 1 of 4
BC546 / BC547 / BC548
Elektronische Bauelemente
NPN Plastic-Encapsulate Transistor
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
BC546
BC547
BC548
BC546
Collector to Emitter Breakdown
BC547
Voltage
BC548
Emitter to Base Breakdown Voltage
BC546
Collector Cut-Off Current
BC547
BC548
BC546
Collector Cut-Off Current
BC547
BC548
BC546
Emitter Cut-Off Current
BC547
BC548
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector to Base Breakdown
Voltage
Symbol
V
(BR)CBO
Min.
80
50
30
65
45
30
6
-
-
-
-
-
-
-
-
-
110
-
-
150
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-
-
-
-
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
800
0.3
1.1
-
Unit
V
Test Conditions
I
C
=100µA, I
E
=0
V
(BR)CEO
V
(BR)EBO
I
CBO
V
V
µA
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=70V, I
E
=0
V
CB
=50V, I
E
=0
V
CB
=30V, I
E
=0
V
CE
=60V, I
B
=0
V
CE
=45V, I
B
=0
V
CE
=30V, I
B
=0
V
EB
=5V, I
C
=0
I
CEO
µA
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
µA
V
CE
=5V, I
C
=2mA
V I
C
=100mA, I
B
=5mA
V I
C
=100mA, I
B
=5mA
MHz V
CE
=5V, I
C
=10mA, f=100MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 2 of 4
BC546 / BC547 / BC548
Elektronische Bauelemente
NPN Plastic-Encapsulate Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 3 of 4
BC546 / BC547 / BC548
Elektronische Bauelemente
NPN Plastic-Encapsulate Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 4 of 4
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

BC547B-C Related Products

BC547B-C BC548B-C BC547-C BC547A-C BC546C-C BC546A-C BC548C-C BC546-C BC547C-C BC546B-C
Description Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3
Maker SECOS SECOS SECOS SECOS SECOS SECOS SECOS SECOS SECOS SECOS
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code compliant compliant compliant compliant compliant compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 45 V 30 V 45 V 45 V 65 V 65 V 30 V 65 V 45 V 65 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 200 200 110 110 420 110 420 110 420 200
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN
surface mount NO NO NO NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz

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Shortcut:   00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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