BC546-C datasheet, PDF - EEWORLD Datasheet

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BC546-C: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size818KB，4 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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BC546-C Overview

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3

BC546-C Parametric

Parameter Name	Attribute value
Maker	SECOS
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	65 V
Configuration	SINGLE
Minimum DC current gain (hFE)	110
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

BC546-C Preview

BC546 / BC547 / BC548

Elektronische Bauelemente

NPN Plastic-Encapsulate Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

TO-92

FEATURE

Power Dissipation

CLASSIFICATION OF h

Product-Rank

Range

BC546A

BC547A

BC548A

110~220

BC546B

BC547B

BC548B

200~450

BC546C

BC547C

Collector

Base

Emitter

REF.

Millimeter

Min.

Max.

4.40

4.70

4.30

4.70

12.70

3.30

3.81

0.36

0.56

0.36

0.51

1.27 TYP.

1.10

2.42

2.66

0.36

0.76

BC548C

420~800

Collector

Base

Emitter

ABSOLUTE MAXIMUM RATINGS

= 25°C unless otherwise specified)

Parameter

Collector to Base Voltage

BC546

BC547

BC548

BC546

BC547

BC548

Symbol

CBO

Ratings

100

625

150, -55~150

Unit

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Total Device Dissipation

Junction, Storage Temperature

CEO

EBO

, T

STG

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

04-Mar-2011 Rev. B

Page 1 of 4

BC546 / BC547 / BC548

Elektronische Bauelemente

NPN Plastic-Encapsulate Transistor

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise specified)

Parameter

BC546

BC547

BC548

BC546

Collector to Emitter Breakdown

BC547

Voltage

BC548

Emitter to Base Breakdown Voltage

BC546

Collector Cut-Off Current

BC547

BC548

BC546

Collector Cut-Off Current

BC547

BC548

BC546

Emitter Cut-Off Current

BC547

BC548

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

Collector to Base Breakdown

Voltage

Symbol

(BR)CBO

Min.

110

150

Typ.

Max.

0.1

800

0.3

1.1

Unit

Test Conditions

=100µA, I

(BR)CEO

(BR)EBO

CBO

µA

=1mA, I

=10µA, I

=70V, I

=50V, I

=30V, I

=60V, I

=45V, I

=30V, I

=5V, I

CEO

µA

EBO

CE(sat)

BE(sat)

µA

=5V, I

=2mA

V I

=100mA, I

=5mA

V I

=100mA, I

=5mA

MHz V

=5V, I

=10mA, f=100MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

04-Mar-2011 Rev. B

Page 2 of 4

BC546 / BC547 / BC548

Elektronische Bauelemente

NPN Plastic-Encapsulate Transistor

CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

04-Mar-2011 Rev. B

Page 3 of 4

BC546 / BC547 / BC548

Elektronische Bauelemente

NPN Plastic-Encapsulate Transistor

CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

04-Mar-2011 Rev. B

Page 4 of 4

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BC546-C Related Products

	BC546-C	BC548B-C	BC547-C	BC547A-C	BC546C-C	BC547B-C	BC546A-C	BC548C-C	BC547C-C	BC546B-C
Description	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3
Maker	SECOS	SECOS	SECOS	SECOS	SECOS	SECOS	SECOS	SECOS	SECOS	SECOS
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compli	compliant	compliant	compliant	compliant	compliant	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	65 V	30 V	45 V	45 V	65 V	45 V	65 V	30 V	45 V	65 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	110	200	110	110	420	200	110	420	420	200
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz

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