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SHDT187282

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 45V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size122KB,2 Pages
ManufacturerSENSITRON
Websitehttp://www.sensitron.com/
Download Datasheet Parametric Compare View All

SHDT187282 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 45V V(RRM), Silicon,

SHDT187282 Parametric

Parameter NameAttribute value
MakerSENSITRON
package instructionR-CBCC-N3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.58 V
JESD-30 codeR-CBCC-N3
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Maximum repetitive peak reverse voltage45 V
Maximum reverse current500 µA
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationBOTTOM
SHDT187282
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5511, REV. -
HERMETIC SCHOTTKY RECTIFIER IN SMD-0.2
Patented Thin Ceramic High Strength Package
Very Low Forward Voltage Drop
Features:
Patented rugged package design (enhanced temperature/power cycling capability over
standard SMD-0.2 package)
Options to ground different nodes to lid (see ordering table)
Very low forward voltage drop
Low power loss, high efficiency, high surge capacity
Guard ring for enhanced durability and long term reliability
Guaranteed reverse avalanche characteristics
Maximum Ratings
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Maximum Thermal Resistance
Max. Junction Temperature
Max. Storage Temperature
Symbol
V
RWM
I
F(AV)
I
FSM
R
JC
T
J
T
stg
Condition
-
50% duty cycle, rectangular
wave form (Single)
8.3 ms, half Sine wave
(per leg)
-
-
-
Max.
45
10
100
6.4
-65 to +150
-65 to +150
Units
V
A
A
C/W
C
C
Electrical Characteristics
Characteristics
Max. Forward Voltage Drop
(per leg)
Symbol
V
F1
V
F2
V
F3
V
F4
V
F5
V
F6
V
F7
V
F8
V
F9
V
F10
V
F11
V
F12
V
F13
V
F14
V
F15
Max. Reverse Current
(per leg)
Max. Junction Capacitance
(per leg)
I
R1
I
R2
C
T
Condition
@ 1A, Pulse, T
J
= 25
C
@ 3A, Pulse, T
J
= 25
C
@ 5A, Pulse, T
J
= 25
C
@ 7A, Pulse, T
J
= 25
C
@ 10A, Pulse, T
J
= 25
C
@ 1A, Pulse, T
J
= 125
C
@ 3A, Pulse, T
J
= 125
C
@ 5A, Pulse, T
J
= 125
C
@ 7A, Pulse, T
J
= 125
C
@ 10A, Pulse, T
J
= 125
C
@ 1A, Pulse, T
J
= - 55
C
@ 3A, Pulse, T
J
= - 55
C
@ 5A, Pulse, T
J
= - 55
C
@ 7A, Pulse, T
J
= - 55
C
@ 10A, Pulse, T
J
= - 55
C
@V
R
= 45V, Pulse, T
J
= 25
C
@V
R
= 45V, Pulse, T
J
= 125
C
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz, V
SIG
= 50mV (p-p)
Max.
0.44
0.48
0.51
0.54
0.58
0.30
0.36
0.41
0.45
0.50
0.54
0.58
0.60
0.63
0.66
0.5
50
1100
Units
V
V
V
mA
mA
pF
@ 2016 Sensitron Semiconductor
221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
www.sensitron.com
sales@sensitron.com

SHDT187282 Related Products

SHDT187282 SHDT187282J2 SHDT187282J1 SHDT187282J3
Description Rectifier Diode, Schottky, 1 Phase, 1 Element, 45V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Phase, 1 Element, 45V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Phase, 1 Element, 45V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Phase, 1 Element, 45V V(RRM), Silicon,
Maker SENSITRON SENSITRON SENSITRON SENSITRON
package instruction R-CBCC-N3 R-CBCC-N3 R-CBCC-N3 R-CBCC-N3
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Other features LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Shell connection CATHODE CATHODE CATHODE CATHODE
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.58 V 0.58 V 0.58 V 0.58 V
JESD-30 code R-CBCC-N3 R-CBCC-N3 R-CBCC-N3 R-CBCC-N3
Maximum non-repetitive peak forward current 100 A 100 A 100 A 100 A
Number of components 1 1 1 1
Phase 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER
Maximum repetitive peak reverse voltage 45 V 45 V 45 V 45 V
Maximum reverse current 500 µA 500 µA 500 µA 500 µA
surface mount YES YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
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